Eisuke Tokumitsu - Publications, H-index & Citations

Eisuke Tokumitsu

japan science & technology agency (jst)

36H指数

265论文数

3.9K被引数

收录论文 24

发表时间

Neuromorphic System Using Memcapacitors and Autonomous Local Learning

IEEE TRANSACTIONS ON NEURAL NETWORKS AND LEARNING SYSTEMS

IF8.9

2023-05-01

PREAI

Kimura, Mutsumi; Ishisaki, Yuma; Miyabe, Yuta; Yoshida, Homare; Ogawa, Isato; Yokoyama, Tomoharu; Haga, Ken-ichi; Tokumitsu, Eisuke; Nakashima, Yasuhiko

Variable-area capacitors controlled by HfO2-based ferroelectric-gate field-effect transistors

APPLIED PHYSICS LETTERS

IF3.6

2022-06-27

PREAI

Miyasako, Takaaki; Yoneda, Shingo; Hosokura, Tadasu; Kimura, Masahiko; Tokumitsu, Eisuke

High performance ferroelectric ZnO thin film transistor using AlOx/HfZrO/ZrOx gate insulator by spray pyrolysis

APPLIED PHYSICS LETTERS

IF3.6

2021-08-30

PREAI

Hasan, Md Mehedi; Mohit; Bae, Jinbaek; Tokumitsu, Eisuke; Chu, Hye-Yong; Kim, Sung Chul; Jang, Jin

Rheology printing for metal-oxide patterns and devices

JOURNAL OF MATERIALS CHEMISTRY C

IF5.1

2014-01-01

PREAI

Kaneda, Toshihiko; Hirose, Daisuke; Miyasako, Takaaki; Phan Trong Tue; Murakami, Yoshitaka; Kohara, Shinji; Li, Jinwang; Mitani, Tadaoki; Tokumitsu, Eisuke; Shimoda, Tatsuya

Unipolar behavior in graphene-channel field-effect-transistors with n-type doped SiC source/drain regions

APPLIED PHYSICS LETTERS

IF3.6

2013-11-25

PREAI

Nagahisa, Yuichi; Harada, Yuichi; Tokumitsu, Eisuke

Highly conductive p-type amorphous oxides from low-temperature solution processing

APPLIED PHYSICS LETTERS

IF3.6

2012-09-26

OAAI

Li, Jinwang; Tokumitsu, Eisuke; Koyano, Mikio; Mitani, Tadaoki; Shimoda, Tatsuya

P-type conductive amorphous oxides of transition metals from solution processing

APPLIED PHYSICS LETTERS

IF3.6

2012-07-30

PREAI

Li, Jinwang; Kaneda, Toshihiko; Tokumitsu, Eisuke; Koyano, Mikio; Mitani, Tadaoki; Shimoda, Tatsuya

Crystallization of lead zirconate titanate without passing through pyrochlore by new solution process

JOURNAL OF THE EUROPEAN CERAMIC SOCIETY

IF6.2

2012-07-01

PREAI

Kameda, Hiroyuki; Li, Jinwang; Chi, Dam Hieu; Sugiyama, Ayumi; Higashimine, Koichi; Uruga, Tomoya; Tanida, Hajime; Kato, Kazuo; Kaneda, Toshihiko; Miyasako, Takaaki; Tokumitsu, Eisuke; Mitani, Tadaoki; Shimoda, Tatsuya

A 60 nm channel length ferroelectric-gate field-effect transistor capable of fast switching and multilevel programming

APPLIED PHYSICS LETTERS

IF3.6

2011-10-31

OAAI

Kaneko, Yukihiro; Nishitani, Yu; Ueda, Michihito; Tokumitsu, Eisuke; Fujii, Eiji

The flexible non-volatile memory devices using oxide semiconductors and ferroelectric polymer poly(vinylidene fluoride-trifluoroethylene)

APPLIED PHYSICS LETTERS

IF3.6

2011-07-06

PREAI

Lee, Gwang-Geun; Tokumitsu, Eisuke; Yoon, Sung-Min; Fujisaki, Yoshihisa; Yoon, Joo-Won; Ishiwara, Hiroshi

Totally solution-processed ferroelectric-gate thin-film transistor

APPLIED PHYSICS LETTERS

IF3.6

2010-10-29

OAAI

Miyasako, Takaaki; Trinh, Bui Nguyen Quoc; Onoue, Masatoshi; Kaneda, Toshihiko; Tue, Phan Trong; Tokumitsu, Eisuke; Shimoda, Tatsuya

A low-temperature crystallization path for device-quality ferroelectric films

APPLIED PHYSICS LETTERS

IF3.6

2010-09-10

PREAI

Li, Jinwang; Kameda, Hiroyuki; Trinh, Bui Nguyen Quoc; Miyasako, Takaaki; Tue, Phan Trong; Tokumitsu, Eisuke; Mitani, Tadaoki; Shimoda, Tatsuya

Impact of interface controlling layer of Al2O3 for improving the retention behaviors of In-Ga-Zn oxide-based ferroelectric memory transistor

APPLIED PHYSICS LETTERS

IF3.6

2010-06-10

PREAI

Yoon, Sung-Min; Yang, Shin-Hyuk; Jung, Soon-Won; Byun, Chun-Won; Park, Sang-Hee Ko; Hwang, Chi-Sun; Lee, Gwang-Geun; Tokumitsu, Eisuke; Ishiwara, Hiroshi

High channel mobility 4H-SiC metal-oxide-semiconductor field-effect transistor with low temperature metal-organic chemical-vapor deposition grown Al2O3 gate insulator

APPLIED PHYSICS LETTERS

IF3.6

2008-05-09

PREAI

Hino, S.; Hatayama, T.; Kato, J.; Tokumitsu, E.; Miura, N.; Oomori, T.

Ferroelectric-gate thin-film transistors using indium-tin-oxide channel with large charge controllability

APPLIED PHYSICS LETTERS

IF3.6

2005-04-12

139

PREAI