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Investigation of Gate Field-Plate Effects on f<sub>max</sub> Improvement in GaN HEMTs for RF Applications
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DOI：10.1109/ted.2026.3705009.png)
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Abstract
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This work presents a comprehensive study on the impact of gate field-plate extension on the RF performance of AlGaN/GaN high-electron mobility transistors (HEMTs). Building on our previous demonstration of a <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$0.6~\mu $ </tex-math></inline-formula>m gate-length micro field-plate T-gate GaN-on-SiC HEMT, achieving a high <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text {f}_{\max }\times \text {L}_{\text {g}}$ </tex-math></inline-formula> product of 48.2 GHz·<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\mu $ </tex-math></inline-formula>m, we investigate two additional devices with gate-to-drain field-plate lengths (<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text {L}_{\text {gpd}}$ </tex-math></inline-formula>) of 0.5 and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$0.8~\mu $ </tex-math></inline-formula>m. Detailed DC and RF small-signal modeling analyses are conducted to identify the operational mechanisms contributing to the observed RF performance trends. Our findings reveal that the device with <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text {L}_{\text {gpd}} = {0}.{5}~\mu $ </tex-math></inline-formula>m achieves a record-high peak <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text {f}_{\max }~\times ~\text {L}_{\text {g}}$ </tex-math></inline-formula> product of 57.3 GHz<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\cdot \mu $ </tex-math></inline-formula>m along with <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text {f}_{\max }$ </tex-math></inline-formula> of 95.5 GHz at <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text {V}_{\text {ds}} = {15}$ </tex-math></inline-formula> V, ascribed to a reduced gate resistance and improved channel-buffer isolation (increased <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text {R}_{\text {ds}}$ </tex-math></inline-formula>), and an enhanced capacitance ratio of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text {C}_{\text {gs}}/{C}_{\text {gd}}$ </tex-math></inline-formula> at high drain bias. The extended field plate geometry enables more effective electric field redistribution, leading to suppressed buffer leakage and improved RF gain characteristics without compromising the DC performance. A detailed analysis using extracted small-signal parameters and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text {f}_{\max }$ </tex-math></inline-formula> formulation confirms that the gate field-plate extension in the investigated device structure improves <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\text {f}_{\max }$ </tex-math></inline-formula> as a result of optimized operational performance characteristics.
Keywords:
AlGaN/GaN high-electron mobility transistor (HEMT)
field-plate
$\text {f}_{\max }~\times ~\text {L}_{\text {g}}$
small-signal modeling
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3.2
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685
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3.7W
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