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Ionic doping effect in ZrO2 resistive switching memory
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DOI：10.1063/1.3364130.png)
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摘要
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Oxygen vacancy (V-O) plays the critical role for resistive switching in transition metal oxide resistive random access memory (RRAM). First principles calculation is performed to study the impact of metallic ion (Al, Ti, or La) doping in ZrO2 on the behaviors of V-O, including defect energy level and formation energy (E-v(f)). Trivalent dopant (Al or La) significantly reduces E-v(f). Based on the calculated results, ZrO2-based RRAM devices are designed to control the formation of V-O, and improved resistive switching uniformity is demonstrated in experiments.
Keyword:
aluminium
doping
lanthanum
random-access storage
titanium
vacancies (crystal)
zirconium compounds
期刊
IF:
3.6
论文数:
10.4W
被引数:
17.8W
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