.png){kind=icon}
返回
Low temperature solution process-based defect-induced orange-red light emitting diode
.png){kind=icon}
OA
AI
DOI：10.1038/srep17961.png)
.png){kind=icon}
.png){kind=icon}
分享.png){kind=icon}
收藏
摘要
En 中文
We report low-temperature solution-processed p-CuO nanorods (NRs)/n-ZnO NRs heterojunction light emitting diode (LED), exploiting the native point defects of ZnO NRs. ZnO NRs were synthesized at 90 degrees C by using hydrothermal method while CuO NRs were synthesized at 100 degrees C by using microwave reaction system. The electrical properties of newly synthesized CuO NRs revealed a promising p-type nature with a hole concentration of 9.64 x 1018 cm(-3). The current-voltage characteristic of the heterojunction showed a significantly high rectification ratio of 105 at 4 V with a stable current flow. A broad orange-red emission was obtained from the forward biased LED with a major peak at 610 nm which was attributed to the electron transition from interstitial zinc to interstitial oxygen point defects in ZnO. A minor shoulder peak was also observed at 710 nm, corresponding to red emission which was ascribed to the transition from conduction band of ZnO to oxygen vacancies in ZnO lattice. This study demonstrates a significant progress toward oxide materials based, defect-induced light emitting device with low-cost, low-temperature methods.
Keyword:
ELECTRONIC-STRUCTURE
OPTICAL-PROPERTIES
ZNO
GROWTH
NANOSTRUCTURES
NANOWIRES
NANORODS
EMISSION
ORIGIN
AI总结
对已上传原文的论文进行重点信息的提取，主要内容包括：简要概述、研究摘要、背景介绍、关键亮点、图文解析、展望与总结。
期刊
IF:
3.9
论文数:
28.3W
被引数:
83.5W
机构
引用论文
CuO nanostructures: Synthesis, characterization, growth mechanisms, fundamental properties, and applicationsCuO纳米结构: 合成，表征，生长机理，基本性质和应用
PREAI
分享收藏Universal energy-level alignment of molecules on metal oxides金属氧化物上分子的通用能级排列.png)
NATURE MATERIALS
NATURE MATERIALSIF38.5
PREAI
分享收藏Quantifying charge carrier concentration in ZnO thin films by Scanning Kelvin Probe MicroscopySCIENTIFIC REPORTSOAAI
SCIENTIFIC REPORTSIF3.9
OAAI分享收藏
查看更多内容