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Low-voltage and high-reliability resistive switching in Si3N4:Si-NCs memristor structures
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DOI：10.1088/1674-4926/25100015.png)
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Abstract
En 中文
This work focuses on the study of the resistive switching (RS) properties of metal−insulator−semiconductor (MIS)-like structures based on silicon nitride (Si3N4) and Si3N4 with embedded silicon nanocrystals (Si-NCs) as the switching layer for the development of memristor devices. The formation of Si-NCs in the Si3N4 matrix, along with its chemical composition, was confirmed by Raman, transmission electron microscope (TEM), and energy-dispersive X-ray spectroscopy (EDS) analyses. The introduction of Si-NCs within the Si3N4 improved the performance of the devices. For Si3N4-based memristor devices, SET and RESET voltages of 2.38 and −1.38 V were obtained, respectively, while these values were reduced to 0.36 V (SET) and −0.11 V (RESET) for Si3N4:Si-NCs-based RS devices. Both RS devices exhibit at least 180 RS cycles, but with an increased ON/OFF ratio from 103 (Si3N4) to 106 when Si-NCs are embedded. The retention time analysis shows that the low resistance state (LRS) and the high resistance state (HRS) are stable for up to 104 s. The analysis of the conduction mechanism indicates that HRS is driven by the space-charge-limited conduction (SCLC), and the LRS by an Ohmic conduction mechanism. A model of the RS mechanism was proposed to understand the role of Si-NCs in the dielectric matrix.
Keywords:
resistive switching
silicon nitride
silicon nanocrystals
memristor
low-voltage operation
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