logo
CanyamAI summaries for academic research
language
MobileMobile
  • Phone FeatureWeChat Mini Program
EnglishEnglish
noticeNotice
BlogBlog
delete
arrow
BackJournal Details
Journal of Semiconductors cover

Journal of Semiconductors

IF5.3
Papers277
Citations3971
Journal Papers 230
Publication Date
delete
Transport mechanism of oxide-based programmable diode
deleteJournal of Semiconductors
IF5.3
delete2026-04-01
delete0
PREAI
deleteJunru Qu; Wentai Xia; Jifang Cao; Xueyang Li; Ran Cheng; Dong Liu; Bing Chen
deleteShare
deleteSave
Enhanced low dose rate sensitivity and pre-irradiation elevated-temperature stress effects in bipolar devices: role of hydrogen in the passivation layer
deleteJournal of Semiconductors
IF5.3
delete2026-04-01
delete0
PREAI
deleteShilong Gou; Wuying Ma; Zhibin Yao; Zujun Wang; Jiangkun Sheng; Yuanyuan Xue
deleteShare
deleteSave
Effects of cell topology and JFET width on depletion layer of SiC MOSFET
deleteJournal of Semiconductors
IF5.3
delete2026-04-01
delete0
PREAI
deleteBofeng Zheng; Houcai Luo; Huan Wu; Jingping Zhang; Xianping Chen
deleteShare
deleteSave
Gate oxide damage and synergistic effect on the breakdown voltage under reverse bias stress for SiC MOSFET
deleteJournal of Semiconductors
IF5.3
delete2026-04-01
delete0
PREAI
deleteZeng, Fanpeng; Cui, Yingxin; Liu, Zhixin; Lu, Zicheng; Lai, Lingling; Gong, Shoulai; Wang, Haochen; Dong, Peng; Han, Jisheng
deleteShare
deleteSave
Challenges; development and future of silica abrasives in chemical mechanical polishing derived from past six decades
deleteJournal of Semiconductors
IF5.3
delete2026-04-01
delete0
PREAI
deleteZuozuo Wu; Jinglin Cheng; Zhiguo Yu; Wei Zhou; Yangjian Li; Jianwei Cao; Wei Sun; Shuai Yuan; Deren Yang
deleteShare
deleteSave
The improvement of layout dependent Cu filling defect
deleteJournal of Semiconductors
IF5.3
delete2026-04-01
delete0
PREAI
deleteYu Zhang; Zhaoqin Zeng
deleteShare
deleteSave
p-GaN HEMT current reference and current mirror for high temperature application
deleteJournal of Semiconductors
IF5.3
delete2026-04-01
delete0
PREAI
deletePingyu Cao; Kepeng Zhao; Zhengxuan Li; Yihao Xu; Ping Zhang; Harm Van Zalinge; Miao Cui; Fei Xue
deleteShare
deleteSave
Low-voltage and high-reliability resistive switching in Si3N4:Si-NCs memristor structures
deleteJournal of Semiconductors
IF5.3
delete2026-04-01
delete0
PREAI
deleteArely Vázquez Jiménez; Mario Moreno Moreno; Liliana Palacios Huerta; Pedro Rosales Quintero; Alfredo Morales Sánchez
deleteShare
deleteSave
Ultrathin amorphous-Ga2O3 vertical SBD-based bridge rectifier and its hybrid buck system
deleteJournal of Semiconductors
IF5.3
delete2026-04-01
delete0
PREAI
deleteHaifeng Chen; Yuduo Zhang; Xiexin Sun; Xuyang Liu; Chunling Chen; Xiangtai Liu; Jia Zhang; Yahan Zhu
deleteShare
deleteSave
Realizing high-performance, enhanced write endurance of low-RA STT-MRAM through MgO tunnel barrier engineering
deleteJournal of Semiconductors
IF5.3
delete2026-04-01
delete1
PREAI
deleteLi, Kunkun; Yang, Xiaolei; Gong, Junlu; He, Shikun
deleteShare
deleteSave
Contrastive learning for data-efficient substrate deoxidation monitoring in edge-side adaptive molecular beam epitaxy systems
deleteJournal of Semiconductors
IF5.3
delete2026-03-01
delete0
PREAI
deleteLi, Yuehao; Shen, Chao; Zhan, Wenkang; Xu, Bo; Yang, Yazhou; Zhang, Xu; Wang, Hongchang; Zhao, Chao; Jian, Haifang
deleteShare
deleteSave
High-speed single-mode 850 nm vertical-cavity surface-emitting laser
deleteJournal of Semiconductors
IF5.3
delete2026-03-01
delete0
PREAI
deleteSi-Cong Tian
deleteShare
deleteSave
AlScN: characteristics; micro/nano fabrication and multiple applications
deleteJournal of Semiconductors
IF5.3
delete2026-03-01
delete0
PREAI
deleteShihang Liu; Jinfeng Gao; Jiajie Pan; Lin Li; Hanxiang Jia; Shuangzan Lu; Maowei Zhang; Bo Zhao; Jun Liu
deleteShare
deleteSave
Boosted IGZO optoelectronic synaptic performance by mitigating photolithography-induced surface effects
deleteJournal of Semiconductors
IF5.3
delete2026-03-01
delete0
PREAI
deleteJingting Sun; Junyan Ren; Yuting Xiong; Yiting Cheng; Huize Tang; Hongfei Wu; Wangying Xu; Lingyan Liang; Hongtao Cao
deleteShare
deleteSave
Programmable mixed-kernel based on MoTe2/MoS2 heterojunction for support vector machine learning
deleteJournal of Semiconductors
IF5.3
delete2026-03-01
delete0
PREAI
deleteXinyu Huang; Jiapeng Du; Langlang Xu; Lei Tong; Xiangxiang Yu; Lei Ye
deleteShare
deleteSave
Optimizing 55 nm split-gate memory for compute-in-memory: a focus on floating-gate engineering
deleteJournal of Semiconductors
IF5.3
delete2026-03-01
delete0
PREAI
deleteWanyi Ling; Ranran Liu; Kun Ren; Dianyu Qi; Yongyu Wu; Guangji Li; Miao Zhou; Qingshuang Xu; Zhenghui Xia; Xuan Li; Dertsyr Fan; Ichun Chuang; Tzung Wen Cheng; Chenming Tsai; Dawei Gao
deleteShare
deleteSave
Optimization and defect control in photoresist etch back processes for advanced semiconductor technologies
deleteJournal of Semiconductors
IF5.3
delete2026-03-01
delete0
PREAI
deleteTing Lei; Zhehong Liu; Zhiwen Liu; Guangjie Xue; Chun Sun; Jun Zhou; Xiangshui Miao
deleteShare
deleteSave
A ZIF-derived ZnS@Co3S4 coupled with MXene and Ni-LDH on Ni foam: constructing a honeycomb-like electrode for advanced supercapacitor
deleteJournal of Semiconductors
IF5.3
delete2026-03-01
delete0
PREAI
deleteXiang Luo; Kexin Li; Gentian Yue; Yueyue Gao; Chen Dong; Furui Tan
deleteShare
deleteSave
1.1 kV/0.72 GW/cm2 β-Ga2O3 Fin-channel diode with ohmic contacts anode
deleteJournal of Semiconductors
IF5.3
delete2026-03-01
delete0
PREAI
deleteGaofu Guo; Xiaodong Zhang; Chunhong Zeng; Dong Wei; Dengrui Zhao; Tiwei Chen; Zhucheng Li; Anjing Luo; Guangyuan Yu; Yu Hu; Zhongming Zeng; Baoshun Zhang; Xianqi Dai
deleteShare
deleteSave
Flexible ITO TFTs with high mobility of 39.1 cm2·V−1·s−1 and excellent uniformity fabricated via mass-production compatible process
deleteJournal of Semiconductors
IF5.3
delete2026-03-01
delete0
PREAI
deleteZuoxu Yu; Yuzhen Zhang; Tingrui Huang; Wenting Xu; Mingming Liu; Di Gui; Kaizhi Sui; Guangan Yang; Weifeng Sun; Runxiao Shi; Wangran Wu
deleteShare
deleteSave