.png){kind=icon}
返回
Microelectromechanical magnetic field sensor based on ΔE effect
.png){kind=icon}
PRE
AI
DOI：10.1063/1.4891540.png)
.png){kind=icon}
原文求助.png){kind=icon}
分享.png){kind=icon}
收藏
摘要
En 中文
We present a fully integrated microelectromechanical magnetic field sensor based on the Delta E effect. The vacuum encapsulated sensor extends our previous approach [B. Gojdka et al., Appl. Phys. Lett. 99, 223502 (2011); Nature 480, 155 (2011)] and now involves an intermediate piezoelectric AlN layer between a SiO2 cantilever and a magnetostrictive FeCoBSi top layer. The AlN layer serves two functions: It drives the resonator, and it is used for electrical read out. The limit of detection was strongly enhanced to 12 nT/root Hz p at 10 Hz. (C) 2014 AIP Publishing LLC.
Keyword:
COMPOSITES
AI总结
对已上传原文的论文进行重点信息的提取，主要内容包括：简要概述、研究摘要、背景介绍、关键亮点、图文解析、展望与总结。
期刊
IF:
3.6
论文数:
10.4W
被引数:
17.8W
机构
引用论文
Self-Biased 215MHz Magnetoelectric NEMS Resonator for Ultra-Sensitive DC Magnetic Field Detection.png)
SCIENTIFIC REPORTS
OAAI
SCIENTIFIC REPORTSIF3.9
OAAI分享收藏分享收藏
查看更多内容