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Microstructuring GaAs Using Reverse-Patterning Lithography: Implications for Transistors and Solar Cells
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DOI：10.1021/acsaelm.0c00876.png)
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This paper introduces reverse patterning lithography (RPL), which combines microcontact printing (mu CP) of a custom-designed fluorinated adsorbate on gallium arsenide (GaAs) and the deposition of a polymeric resin as a wet-etching resist. Positive patterns were formed on GaAs wafers having various designed shapes and sharp edges at a lateral resolution of 100.0 pm and a depth of up to 3.0 mu m. The RPL method benefits from being cost-effective and time-efficient compared to conventional photo-lithography and has the potential for use in the fabrication of various GaAs devices, including solar cells, light-emitting diodes, and microwave and radio frequency transistors.
Keyword:
reverse patterning lithography
patterned GaAs
microcontact printing
microstructuring
self-assembled monolayers
SAMs
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