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Monolayer WS2 based electro-absorption modulator
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DOI：10.1016/j.optmat.2021.110851.png)
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摘要
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Monolayer WS2 electro-absorption modulator (EAM) on GaN waveguide is investigated. By covering monolayer WS2 on top of the optical waveguide and applying different voltages to change the refractive index of WS2, a strong interaction between monolayer WS2 and light is obtained, which leads to a significant change of the imaginary part of effective mode index (EMI) in the waveguide. A systematic and detailed discussion has been presented to describe and design the EAM. Results show that the EAM can achieve 153 GHz 3-dB modulation bandwidth, around 70% modulation depth and lower insertion loss with 10 mu m-long active region. These will be helpful for the study of two-dimensional material electro-optic modulator.
Keyword:
Monolayer WS2
Electro-absorption modulator
Modulation depth
Modulation bandwidth
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期刊
IF:
4.2
论文数:
1.7W
被引数:
3.4W
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