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Multi-functional multi-gate one-transistor process-in-memory electronics with foundry processing and footprint reduction
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DOI：10.1038/s43246-022-00261-3.png)
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Logic gates are fundamental components of integrated circuits, and integration strategies involving multiple logic gates and advanced materials have been developed to meet the development requirements of high-density integrated circuits. However, these strategies are still far from being widely applicable owing to their incompatibility with the modern silicon-based foundry lines. Here, we propose a silicon-foundry-line-based multi-gate one-transistor design to simplify the conventional multi-transistor logic gates into one-transistor gates, thus reducing the circuit footprint by at least 40%. More importantly, the proposed configuration could simultaneously provide the multi-functionalities of logic gates, memory, and artificial synapses. In particular, our design could mimic the artificial synapses in three dimensions while simultaneously being implemented by standard silicon-on-insulator process technology. The foundry-line-compatible one-transistor design has great potential for immediate and widespread applications in next-generation multifunctional electronics. Developing scalable strategies of miniaturization and integration is key for achieving high-density integrated circuit devices. Here, the authors propose a silicon-based one-transistor device with a 40% reduction in circuit footprint, which combines the functionalities of logic gates, memory, and artificial synapses for mass production.
Keyword:
CIRCUITS
LOGIC
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9.6
论文数:
1.4K
被引数:
4.3K
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