.png){kind=icon}
返回
Nano Watt CMOS temperature sensor
.png){kind=icon}
PRE
AI
DOI：10.1007/s10470-013-0046-6.png)
.png){kind=icon}
原文求助.png){kind=icon}
分享.png){kind=icon}
收藏
摘要
En 中文
In this paper, an ultra-low power embedded full CMOS temperature sensor based on sub-threshold MOS operation is designed in a 0.18 mu m CMOS technology. It focuses on temperature measurement using the difference between the gate-source voltages of transistors operated in sub-threshold region that is proportional to absolute temperature. By using the proposed scheme the wide range supply voltage of 0.6-2.5 V with inaccuracy of +0.55 A degrees C/V and total power consumption of merely 7 nW at 120 A degrees C is achieved. The performance of the sensor is highly linear and the predicted temperature error is +/- 2 A degrees C in the range of 10-120 A degrees C. The sensor occupies a small area of 67 x 31 mu m(2). Ultra-low power consumption of the sensor illustrates proper operation for low power applications such as battery powered portable devices, passive RFID tags and wireless sensor network applications.
Keyword:
Temperature sensor
Full CMOS
Sub-threshold
Nano Watt
Ultra-low power
AI总结
对已上传原文的论文进行重点信息的提取，主要内容包括：简要概述、研究摘要、背景介绍、关键亮点、图文解析、展望与总结。
期刊
IF:
1.4
论文数:
181
被引数:
2.1K
机构
引用论文
.png){kind=icon}
分享收藏
查看更多内容