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Oxide-based RRAM materials for neuromorphic computing
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DOI：10.1007/s10853-018-2134-6.png)
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摘要
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In this review, a comprehensive survey of different oxide-based resistive random-access memories (RRAMs) for neuromorphic computing is provided. We begin with the history of RRAM development, physical mechanism of conduction, fundamental of neuromorphic computing, followed by a review of a variety of RRAM oxide materials (PCMO, HfOx, TaOx, TiOx, NiOx, etc.) with a focus on their application for neuromorphic computing. Our goal is to give a broad review of oxide-based RRAM materials that can be adapted to neuromorphic computing and to help further ongoing research in the field.
Keyword:
RESISTIVE SWITCHING BEHAVIOR
TIMING-DEPENDENT PLASTICITY
LONG-TERM POTENTIATION
MEMORY DEVICES
HIGH-SPEED
THIN-FILM
LOW-POWER
IMPLEMENTATION
RESISTANCE
SYNAPSE
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对已上传原文的论文进行重点信息的提取，主要内容包括：简要概述、研究摘要、背景介绍、关键亮点、图文解析、展望与总结。
期刊
IF:
3.9
论文数:
3.2W
被引数:
7.2W
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