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Oxide Heterostructure Resistive Memory
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DOI：10.1021/nl401287w.png)
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Resistive switching devices are widely believed as a promising candidate for future memory and logic applications. Here we show that by using multilayer oxide heterostructures the switching characteristics can be systematically controlled, ranging from unipolar switching to complementary switching and bipolar switching with linear and nonlinear on-states and high endurance. Each layer can be tailed for a specific function during resistance switching, thus greatly improving the degree of control and flexibility for optimized device performance.
Keyword:
Resistive random access memory
memristive device
oxide heterostructure
sneak path
X-ray photoelectron spectroscopy
oxygen vacancy
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9.1
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2.7W
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16.5W
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