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Phase-Change Memory for Cryogenic In-Memory Computing

delete2026-03-11
delete0
PRE
AI
D
D. Lombardo
S
S. Gautam
A
Alberto Ferraris
M
Manuel Le Gallo
V
Valeria Bragaglia
A
Abu Sebastian *
S
Syed Ghazi Sarwat *
DOI：10.1002/adfm.202525704delete
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摘要

摘要

En 中文
内存计算（IMC）是一种新兴的非冯·诺依曼范式，它利用存储器件的本征物理特性直接在存储阵列中执行计算。在各种候选技术中，相变存储器（PCM）已脱颖而出成为领先的非易失性技术，在内存计算中展现出巨大潜力，特别是在深度学习加速方面。基于PCM的内存计算也将在低温应用中发挥关键作用，包括量子计算和深空电子学。本研究中，我们全面表征了温度低至5 K的PCM器件，涵盖了这些领域最相关的条件。我们系统地研究了相位转变和阈值开关等关键物理机制，这些机制在低温下控制器件编程。此外，我们还研究了包括电学输运、结构弛豫和读出噪声等属性，这些属性显著影响读出行为，进而影响计算任务的精度。
Keyword:
cryo-electronics
in-memory computing
phase change memory

期刊

Advanced Functional Materials 封面图
Advanced Functional Materials
IF:
19
论文数:
3.5W
被引数:
32.1W

机构

I
ibm
学者数:
126
论文数: 40
被引数: 0
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