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Physical Unclonable Function Based on 3D-NAND Flash Array Structure With Multi-Chip Implementation

delete2026-06-17
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H
Hwiho Hwang
S
Sangwook Youn
J
Jinwoo Park
D
Dayeon Yu
H
Hyungjin Kim *
DOI:10.1002/smll.202506326delete
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摘要

摘要

En 中文
作为一种有前景的硬件安全基元,物理不可克隆函数(PUFs)利用物理属性中的随机、工艺诱导变化来生成独特且不可克隆的设备指纹。然而,传统的基于CMOS的PUFs需要大型且复杂的电路,导致面积和功耗增加。为解决此问题,我们提出了一种基于3D-NAND闪存阵列的PUF,利用固有的串电流变化。与先前的写操作方法不同,它采用读操作进行CRP提取,从而避免应力诱导的退化。挑战通过串选择线和位线施加,而每条字线充当独立的PUF芯片。通过比较求和的串电流生成1位响应。得益于3D-NAND闪存的高单元密度,多个堆叠的PUF芯片(具有指数级大的CRP容量)可集成到单个阵列中。我们使用电荷俘获闪存制造了48 × 24平面NAND闪存阵列,确认了由于工艺变化和随机形成的多晶硅晶粒边界导致的电流可变性。使用测量数据实现了48 × 24 × 8 3D-NAND PUF,实现了近理想的PUF指标,并通过了自相关分析、全部16项NIST统计测试和ML攻击模拟。这些结果突显了3D-NAND闪存对于可扩展、可靠的硬件安全的潜力。
Keyword:
charge trapping material
in-memory computing
NAND flash
physical unclonable function (PUF)
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被引数:
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hanyang university
学者数:
2.9W
论文数: 2.7W
被引数: 36
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