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H

Hyungjin Kim

Department of Semiconductor Engineering

40H指数
395论文数
6.2K被引数
收录论文 84
发表时间
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Capacitive in-memory vector–matrix multiplication computing with charge-trap memcapacitors基于电荷捕获忆容器的容性存内向量-矩阵乘法计算
errNano Convergence
IF11
err2026-09-10
err0
errOAAI
errJunsu Yu; Hwiho Hwang; Hyungjin Kim; Woo Young Choi
err分享
err收藏
Unified In-Memory Hardware Security Enabled by an Entropy Landscape in a Memristor Crossbar基于忆阻器交叉阵列中熵景观的统一片上内存硬件安全实现
errSmall
IF12.1
err2026-09-03
err0
PREAI
errJinwoo Park; Hyungjin Kim
err分享
err收藏
Single-device 1C-XNOR operation in charge-trap memcapacitor crossbar for high-density in-memory computing单设备1C-XNOR操作在电荷捕获忆容交叉阵列中的高密度存内计算
errNano Energy
IF17.1
err2026-08-24
err0
PREAI
errDahoon Lee; Hwiho Hwang; Dayeon Yu; Hyungjin Kim
err分享
err收藏
A Unified Flash Memory Platform for Mode-Adaptive and Robust AI Computation一种用于模式自适应和鲁棒AI计算的统一闪存平台
errAdvanced Science
IF14.1
err2026-07-28
err0
errOAAI
errDayeon Yu; Hwiho Hwang; Byeongchan Oh; Junmo Lee; Shimeng Yu; Tae-Hyeon Kim; Hyungjin Kim
err分享
err收藏
Molybdenum Nano-Island Embedded Optoelectronic RRAM With Enhanced Linear Synaptic Plasticity for Neuromorphic Visual Perception钼纳米岛嵌入式光电阻变存储器，具有增强的线性突触可塑性，用于神经形态视觉感知
errLaser & Photonics Reviews
IF10
err2026-07-28
err0
PREAI
errChandreswar Mahata; Chanmin Park; Kyeongjun Min; Muhammad Ismail; Janghyuk Moon; Hyungjin Kim; Sungjun Kim
err分享
err收藏
Physical Unclonable Function Based on 3D-NAND Flash Array Structure With Multi-Chip Implementation基于3D-NAND闪存阵列结构的物理不可克隆函数与多芯片实现
errSmall
IF12.1
err2026-06-17
err0
errOAAI
errHwiho Hwang; Sangwook Youn; Jinwoo Park; Dayeon Yu; Hyungjin Kim
err分享
err收藏
Enhancing Post-Training Quantization Robustness in RRAM-Based CIM via σ-Clipping of Weights通过权重σ截断提升RRAM基 CIM后训练量化鲁棒性
errACS Applied Electronic Materials
IF4.7
err2026-04-20
err0
PREAI
errByeongchan Oh; Sangwook Youn; Hyungjin Kim; Tae-Hyeon Kim
err分享
err收藏
In-Memory Euclidean Distance Computation in a Stacked Memristor Crossbar for Hardware Self-Organizing Maps堆叠式忆阻器交叉阵列中的内存欧几里得距离计算硬件自组织映射
errAdvanced Functional Materials
IF19
err2026-01-14
err0
PREAI
errJinwoo Park; Hyungjin Kim
err分享
err收藏
Investigation of Effect of Resin Localization on the Friction Characteristics of Compounds in Partially Miscible Polymer Blends研究树脂在部分互溶聚合物共混物中局部化对复合材料摩擦特性的影响
errTribology International
IF6.9
err2026-01-08
err0
PREAI
errBaekhwan Kim; Hyungjin Kim; Hyejeong Kim; Kyoungseok Kim; Hyojoo Kim; Yoonjin Chang; Bumyong Yoon; Byoungcheol Song; Jungki Seo; Eunyoung Oh; Sungwoo Kim; Wooksoo Kim; Jongmyung Kim; Jonghwan Shur
err分享
err收藏
ZrO2 seed layer effects on switching characteristics and low-frequency noise in HZO ferroelectric tunnel junction arraysZrO2种子层对HZO铁电隧穿结阵列的开关特性及低频噪声的影响
errJournal of Alloys and Compounds
IF6.3
err2025-12-19
err0
PREAI
errSangwook Youn; Hwiho Hwang; Hyungjin Kim
err分享
err收藏
Energy-Efficient Ising Solver Implementations in Forming-Free Memristor Crossbar Arrays for Combinatorial Optimization Problems用于组合优化问题的自形成免忆阻器交叉阵列中的节能伊辛求解器实现
errNano Energy
IF17.1
err2025-11-30
err0
PREAI
errSangwook Youn; Kyuree kim; Jinwoo Park; Hyungjin Kim
err分享
err收藏
Nonlinear quantized conductance dynamics in vertical SiN RRAM for scalable memory-learning integration垂直SiN RRAM中非线性量化电导动力学用于可扩展的存储-学习集成
errJournal of Materials Science & Technology
IF14.3
err2025-11-28
err0
PREAI
errJihee Park; Nawoon Kim; Hyesung Na; Hyungjin Kim; Sungjun Kim
err分享
err收藏
Recent advances in ferroelectric materials, devices, and in-memory computing applications铁电材料、器件及存内计算应用的最新进展
errNano Convergence
IF11
err2025-11-06
err0
errOAAI
errHwiho Hwang; Sangwook Youn; Hyungjin Kim
err分享
err收藏
Step-Efficient Parallel Implementation of n-bit Full Adders Using Stateful Logic in Memristor Crossbar Arrays基于忆阻器交叉阵列的有状态逻辑n位全加器的步效并行实现
errADVANCED INTELLIGENT SYSTEMS
IF6.1
err2025-10-01
err0
errOAAI
errPark, Jinwoo; Lee, Jungjin; Youn, Sangwook; Kim, Hyungjin
err分享
err收藏
Physical Unclonable Function with 3D Stacked Memristor Crossbar Array Using Self-Differential Pair基于自微分对的三维堆叠忆阻器交叉阵列的物理不可克隆函数
errACS Nano
IF16
err2025-07-28
err0
PREAI
errJinwoo Park; Hyungjin Kim
err分享
err收藏
Optically Tunable Synaptic Plasticity and Memory Emulation in Au-Nanoparticle Enhanced HfTiOx/Al2O3-Based Photonic Memristors光学可调突触可塑性与记忆模拟在Au纳米粒子增强的HfTiOx/Al2O3基光子忆阻器中
errAdvanced Functional Materials
IF19
err2025-07-21
err0
PREAI
errChandreswar Mahata; Muhammad Ismail; Hyungjin Kim; Sungjun Kim
err分享
err收藏
Phase Transformation of Needle-Like Fe-Co0.85Se to Hexagonal Fe-Co3O4 for Enhanced High-Current-Density Oxygen Evolution via Lattice Oxygen Redox针状Fe-Co0.85Se到六方Fe-Co3O4的相变通过晶格氧氧化还原实现高电流密度下增强的氧析出反应
errSmall
IF12.1
err2025-07-15
err0
PREAI
errYo Seob Won; Balakrishnan Kirubasankar; Hyung-Jin Kim; Ik Seon Kwon; Jae Woo Kim; Hayoung Ko; Young-Kyu Han; Soo Min Kim; Ki Kang Kim
err分享
err收藏
Configurable Kernel Map Implementation in Memristor Crossbar for Convolution Neural Network基于忆阻器交叉阵列的可配置核映射实现用于卷积神经网络
errADVANCED INTELLIGENT SYSTEMS
IF6.1
err2025-05-15
err0
errOAAI
errKim, G; Youn, S; Park, J; Kim, H
err分享
err收藏
Efficient n- and p-Type Molecular Dopings in Large-Scale Monolayer Dichalcogenides for High-Performance Field-Effect Transistors用于高性能场效应晶体管的大规模单层二硫族化合物中的有效n型和p型分子掺杂
errACS NANO
IF16
err2025-05-02
err0
PREAI
errJung, YS; Kim, JY; Shen, W; Han, SY; Kim, H; Cho, YS
err分享
err收藏
Bias-Independent True Random Number Generator Circuit using Memristor Noise Signals as Entropy Source
errADVANCED INTELLIGENT SYSTEMS
IF6.1
err2024-12-15
err0
errOAAI
errPark, Jinwoo; Kim, Hyunjoong; Kim, Hyungjin
err分享
err收藏

研究方向

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合作学者
合作期刊
D
Deborah Estrin
H 指数: 114 · 论文数: 693
J
Jang Wook Choi
H 指数: 109 · 论文数: 395
P
Pramod S. Patil
H 指数: 84 · 论文数: 664
Yousung Jung 封面图
Yousung Jung (Yousung Jung)
H 指数: 82 · 论文数: 336
Y
Young‐Min Kim
H 指数: 80 · 论文数: 1.6K
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