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PT-symmetric interference transistor
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DOI：10.1038/s41598-018-34132-0.png)
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摘要
En 中文
We present a model of the molecular transistor, operation of which is based on the interplay between two physical mechanisms, peculiar to open quantum systems that act in concert: PT-symmetry breaking corresponding to coalescence of resonances at the exceptional point of the molecule, connected to the leads, and Fano-Feshbach antiresonance. This switching mechanism can be realised in particular in a special class of molecules with degenerate energy levels, e.g. diradicals, which possess mirror symmetry. At zero gate voltage infinitesimally small interaction of the molecule with the leads breaks the PT-symmetry of the system that, however, can be restored by application of the gate voltage preserving the mirror symmetry. PT-symmetry broken state at zero gate voltage with minimal transmission corresponds to the off state while the PT-symmetric state at non-zero gate voltage with maximum transmission - to the on state. At zero gate voltage energy of the antiresonance coincides with exceptional point. We construct a model of an all-electrical molecular switch based on such transistors acting as a conventional CMOS inverter and show that essentially lower power consumption and switching energy can be achieved, compared to the CMOS analogues.
Keyword:
SINGLE-MOLECULE JUNCTIONS
QUANTUM INTERFERENCE
CONDUCTIVITY
ELECTRONICS
HYDROCARBON
TRANSPORT
CIRCUITS
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3.9
论文数:
28.3W
被引数:
83.5W
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