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Quantized rectification in a quantum dot nanojunction
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DOI：10.1103/PhysRevB.80.075317.png)
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摘要
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Rectification properties of a quantum wire (QW) coupled asymmetrically to a quantum dot (QD) are studied for bias voltages up to 1 V. The QW-QD system is based on a modulation- doped GaAs/AlGaAs heterostructure with InGaAs self-assembled quantum dots in close vicinity to a two-dimensional electron gas. Due to an applied lateral electric field, the coupled QW-QD system is formed. By increasing the bias voltage, the QD becomes charged by electron tunneling from the wire and quantized rectification is observed in the QW. We attribute the rectifying behavior to a recently proposed charging rectifier [M. Stopa, Phys. Rev. Lett. 88, 146802 (2002)], whereas many electrons contribute to the charging rectification.
Keyword:
Y-BRANCH SWITCH
ELECTRON-TRANSPORT
CAPACITANCE
RECTIFIER
JUNCTIONS
RATCHETS
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3.7
论文数:
15.4W
被引数:
41.0W
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