返回
Reconfigurable 2D-ferroelectric platform for neuromorphic computing
DOI:10.1063/5.0131838.png)
摘要
En 中文
To meet the requirement of data-intensive computing in the data-explosive era, brain-inspired neuromorphic computing have been widely investigated for the last decade. However, incompatible preparation processes severely hinder the cointegration of synaptic and neuronal devices in a single chip, which limited the energy-efficiency and scalability. Therefore, developing a reconfigurable device including synaptic and neuronal functions in a single chip with same homotypic materials and structures is highly desired. Based on the room-temperature out-of-plane and in-plane intercorrelated polarization effect of 2D alpha-In2Se3, we designed a reconfigurable hardware platform, which can switch from continuously modulated conductance for emulating synapse to spiking behavior for mimicking neuron. More crucially, we demonstrate the application of such proof-of-concept reconfigurable 2D ferroelectric devices on a spiking neural network with an accuracy of 95.8% and self-adaptive grow-when required network with an accuracy of 85% by dynamically shrinking its nodes by 72%, which exhibits more powerful learning ability and efficiency than the static neural network.
Keyword:
2-DIMENSIONAL MATERIALS
NEURAL-NETWORKS
FERROELECTRICITY
CLASSIFICATION
期刊
IF:
11.6
论文数:
1.2K
被引数:
1.3W
机构
引用论文
Intercorrelated In-Plane and Out-of-Plane Ferroelectricity in Ultrathin Two-Dimensional Layered Semiconductor In2Se3超薄二维层状半导体In2Se3中的相互关联的面内和面外铁电性
NANO LETTERS
IF9.1
Brain-inspired computing with memristors: Challenges in devices, circuits, and systems使用忆阻器的脑启发计算: 设备,电路和系统中的挑战
APPLIED PHYSICS REVIEWS
IF11.6
Quantum Conductance in Memristive Devices: Fundamentals, Developments, and Applications忆阻器件中的量子电导: 基本原理、发展和应用
ADVANCED MATERIALS
IF26.8
Reservoir computing using dynamic memristors for temporal information processing使用动态忆阻器进行时间信息处理的储层计算
NATURE COMMUNICATIONS
IF15.7
Prediction of intrinsic two-dimensional ferroelectrics in In2Se3 and other III2-VI3 van der Waals materialsIn2Se3和其他III2-VI3范德华材料中固有二维铁电体的预测
NATURE COMMUNICATIONS
IF15.7
Two-Dimensional van der Waals Ferroelectrics: Scientific and Technological Opportunities二维范德华铁电体: 科学和技术的机会
ACS NANO
IF16
Out-of-Plane Piezoelectricity and Ferroelectricity in Layered α-In2Se3 Nanoflakes层状 α-In2Se3纳米片中的平面外压电性和铁电性
NANO LETTERS
IF9.1

