Robust single-electron memory with quantum states manipulation

doi:10.1126/science.aeg6638

2026-07-16

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DOI：10.1126/science.aeg6638

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摘要

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在单电子水平上实现稳定且可区分的量子存储器长期以来一直受到杂散栅-沟道边缘电容增加的挑战，这导致器件尺寸缩小时存储电子引起的阈值电压偏移（ΔVth）显著降低。刘等人利用原子级薄的二维材料和边缘接触的金属电极，设计了一种共面漏极-沟道-源极结构，使其在室温下实现了0.5伏的非易失性ΔVth。他们的工作展示了控制单电子量子行为的能力，为纳米级存储器器件工程提供了有前景的前景。——Yury Suleymanov

期刊

Science

IF:

45.8

论文数:

1.4W

被引数:

78.6W

机构

fudan university

学者数:

11.8W

论文数: 7.7W

被引数: 121

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