Silicon micromachining using a high-density plasma source

Serrita A. McAuley

doi:10.1088/0022-3727/34/18/309

Silicon micromachining using a high-density plasma source

2001-09-05

165

PRE

AI

DOI：10.1088/0022-3727/34/18/309

原文链接

原文求助

摘要

En 中文

Dry etching of Si is critical in satisfying the demands of the micromachining industry. The micro-electro-mechanical systems (MEMS) community requires etches capable of high aspect ratios, vertical profiles, good feature size control and etch uniformity along with high throughput to satisfy production requirements. Surface technology systems' (STS's) high-density inductively coupled plasma (ICP) etch tool enables a wide range of applications to be realized whilst optimizing the above parameters. Components manufactured from Si using an STS ICP include accelerometers and gyroscopes for military, automotive and domestic applications. STS's advanced silicon etch (ASE (TM)) has also allowed the first generation of MEMS-based optical switches and attenuators to reach the marketplace, In addition, a specialized application for fabricating the next generation photolithography exposure masks has been optimized for 200 mm diameter wafers, to depths of similar to 750 mum. Where the profile is not critical, etch rates of greater than 8 mum min(-1) have been realized to replace previous methods such as wet etching. This is also the case for printer applications. Specialized applications that require etching down to pyrex or oxide often result in the loss of feature size control at the interface; this is an industry wide problem. STS have developed a technique to address this. The rapid progression of the industry has led to development of the STS ICP etch tool, as well as the process.

Silicon micromachining using a high-density plasma source

摘要

AI总结

期刊

机构

引用论文