Silicon superconducting quantum interference device

J. E. Duvauchelle

doi:10.1063/1.4928660

2015-08-17

DOI：10.1063/1.4928660

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摘要

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We have studied a Superconducting Quantum Interference Device (SQUID) made from a single layer thin film of superconducting silicon. The superconducting layer is obtained by heavily doping a silicon wafer with boron atoms using the gas immersion laser doping technique. The SQUID is composed of two nano-bridges (Dayem bridges) in a loop and shows magnetic flux modulation at low temperature and low magnetic field. The overall behavior shows very good agreement with numerical simulations based on the Ginzburg-Landau equations. (C) 2015 AIP Publishing LLC.

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Applied Physics Letters

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3.6

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10.4W

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universite grenoble alpes (uga)

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2.1W

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communaute universite grenoble alpes

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CEA

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Universite Paris Saclay

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