D. Débarre - Publications, H-index & Citations

D. Débarre

universite grenoble alpes (uga)

20H指数

143论文数

1.6K被引数

收录论文 26

发表时间

Nanosecond laser annealing: Impact on superconducting silicon on insulator monocrystalline epilayers

APL MATERIALS

IF4.5

2024-12-02

OAAI

Baron, Y.; Labar, J. L.; Lequien, S.; Pecz, B.; Daubriac, R.; Kerdiles, S.; Alba, P. Acosta; Marcenat, C.; Debarre, D.; Lefloch, F.; Chiodi, F.

Strongly Nonlinear Superconducting Silicon Resonators

PHYSICAL REVIEW APPLIED

IF4.4

2022-03-23

OAAI

Bonnet, P.; Chiodi, F.; Flanigan, D.; Delagrange, R.; Brochu, N.; Debarre, D.; le Sueur, H.

Silicon superconducting quantum interference device

APPLIED PHYSICS LETTERS

IF3.6

2015-08-17

OAAI

Duvauchelle, J. E.; Francheteau, A.; Marcenat, C.; Chiodi, F.; Debarre, D.; Hasselbach, K.; Kirtley, J. R.; Lefloch, F.

Gas Immersion Laser Doping for superconducting nanodevices

APPLIED SURFACE SCIENCE

IF6.9

2014-05-01

PREAI

Chiodi, F.; Grockowiak, A.; Duvauchelle, J. E.; Fossard, F.; Lefloch, F.; Klein, T.; Marcenat, C.; Debarre, D.

Thickness dependence of the superconducting critical temperature in heavily doped Si:B epilayers

PHYSICAL REVIEW B

IF3.7

2013-08-12

OAAI

Grockowiak, A.; Klein, T.; Cercellier, H.; Levy-Bertrand, F.; Blase, X.; Kacmarcik, J.; Kociniewski, T.; Chiodi, F.; Debarre, D.; Prudon, G.; Dubois, C.; Marcenat, C.

Superconducting properties of laser annealed implanted Si:B epilayers

SUPERCONDUCTOR SCIENCE & TECHNOLOGY

IF4.2

2013-03-07

PREAI

Grockowiak, A.; Klein, T.; Bustarret, E.; Kacmarcik, J.; Dubois, C.; Prudon, G.; Hoummada, K.; Mangelinck, D.; Kociniewski, T.; Debarre, D.; Boulmer, J.; Marcenat, C.

Optical and electrical properties of laser doped Si:B in the alloy range

APPLIED SURFACE SCIENCE

IF6.9

2012-09-01

PREAI

Bhaduri, A.; Kociniewski, T.; Fossard, F.; Boulmer, J.; Debarre, D.

Nanoscale concentration and strain distribution in pseudomorphic films Si1-xGex/Si processed by pulsed laser induced epitaxy

APPLIED SURFACE SCIENCE

IF6.9

2012-09-01

PREAI

Vincent, L.; Fossard, F.; Kociniewski, T.; Largeau, L.; Cherkashin, N.; Hytch, M. J.; Debarre, D.; Sauvage, T.; Claverie, A.; Boulmer, J.; Bouchier, D.

Subkelvin tunneling spectroscopy showing Bardeen-Cooper-Schrieffer superconductivity in heavily boron-doped silicon epilayers

PHYSICAL REVIEW B

IF3.7

2010-10-20

OAAI

Dahlem, F.; Kociniewski, T.; Marcenat, C.; Grockowiak, A.; Pascal, L. M. A.; Achatz, P.; Boulmer, J.; Debarre, D.; Klein, T.; Bustarret, E.; Courtois, H.

Low-temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers

PHYSICAL REVIEW B

IF3.7

2010-01-04

OAAI

Marcenat, C.; Kacmarcik, J.; Piquerel, R.; Achatz, P.; Prudon, G.; Dubois, C.; Gautier, B.; Dupuy, J. C.; Bustarret, E.; Ortega, L.; Klein, T.; Boulmer, J.; Kociniewski, T.; Debarre, D.

Enhanced photoluminescence of heavily n-doped germanium n重掺杂锗的增强光致发光

APPLIED PHYSICS LETTERS

IF3.6

2009-05-14

112

PREAI

El Kurdi, M.; Kociniewski, T.; Ngo, T. -P.; Boulmer, J.; Debarre, D.; Boucaud, P.; Damlencourt, J. F.; Kermarrec, O.; Bensahel, D.

Selective Si growth on partially desorbed SiO2/Si(001) surfaces

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2008-10-01

PREAI

L. H. Nguyen; Renard, C.; Yam, V.; Fossard, F.; Debarre, D.; Bouchier, D.

Pseudomorphic SiGe/Si(001) layers synthesized by gas immersion laser doping

APPLIED PHYSICS LETTERS

IF3.6

2008-07-16

PREAI

Fossard, Frederic; Boulmer, Jacques; Debarre, Dominique; Perrossier, Jean-Luc; Bachelet, Cyril; Fortuna, Franck; Mathet, Veronique; Bouchier, Daniel

Laser doping for microelectronics and microtechnology

APPLIED SURFACE SCIENCE

IF6.9

2005-07-01

PREAI

Sarnet, T; Kerrien, G; Yaakoubi, N; Bosseboeuf, A; Dufour-Gergam, E; Débarre, D; Boulmer, J; Kakushima, K; Laviron, C; Hernandez, M; Venturini, J; Bourouina, T

UHV-CVD growth and annealing of thin fully relaxed Ge films on (001)Si

OPTICAL MATERIALS

IF4.2

2005-02-01

PREAI

Halbwax, M; Rouviere, M; Zheng, Y; Debarre, D; Nguyen, LH; Cercus, JL; Clerc, C; Yam, V; Laval, S; Cassan, E; Bouchier, D

Formation and properties of selectively grown Ge/Si quantum dots

SUPERLATTICES AND MICROSTRUCTURES

IF3.3

2004-07-01

PREAI

Nguyen, LH; Le Thanh, V; Halbwax, M; Débarre, D; Yam, V; Fossard, F; Boucaud, P; Meyer, F; Bouchier, D