Spin echo from erbium implanted silicon

Mark Hughes

doi:10.1063/5.0046904

2021-05-12

DOI：10.1063/5.0046904

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Erbium implanted silicon as a quantum technology platform has both telecommunications and integrated circuit processing compatibility. In Si implanted with Er to a concentration of 3x10(17) cm(-3) and O to a concentration of 10(20) cm(-3), the electron spin coherence time, T-2, and the spin-lattice relaxation time, T-1, were measured to be 7.5 mu s and similar to 1 ms, respectively, at 5 K. The spin echo decay profile displayed strong modulation, which was consistent with the super-hyperfine interaction between Er3+ and a spin bath of Si-29 nuclei. The calculated spectral diffusion time was similar to the measured T-2, which indicated that T-2 was limited by spectral diffusion due to T-1-induced flips of neighboring Er3+ spins. The origin of the echo is an Er center surrounded by six O atoms with monoclinic C-1h site symmetry. Published under an exclusive license by AIP Publishing.

Keyword:

ELECTRON-PARAMAGNETIC-RESONANCE

IMPURITY COMPLEXES

NUCLEAR SPINS

STATE

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Applied Physics Letters

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3.6

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10.4W

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communaute universite grenoble alpes

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论文数: 2.7W

被引数: 29

University of Salford

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university of london

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21.5W

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