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Strain-Dependent Edge Structures in MoS2 Layers

delete2017-10-26
delete47
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OA
AI
M
Miguel Tinoco
M
Maduro, Luigi
M
Masaki Mukai
E
Eiji Okunishi
C
Conesa-Boj, Sonia *
DOI:10.1021/acs.nanolett.7b03627delete
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摘要

摘要

En 中文
Edge structures are low-dimensional defects unavoidable in layered materials of the transition metal dichalcogenides (TMD) family. Among the various types of such structures, the armchair (AC) and zigzag (ZZ) edge types are the most common. It has been predicted that the presence of intrinsic strain localized along these edges structures can have direct implications for the customization of their electronic properties. However, pinning down the relation between local structure and electronic properties at these edges is challenging. Here, we quantify the local strain field that arises at the edges of MoS2 flakes by combining aberration-corrected transmission electron microscopy (TEM) with the geometrical-phase analysis (GPA) method. We also provide further insight on the possible effects of such edge strain on the resulting electronic behavior by means of electron energy loss spectroscopy (EELS) measurements. Our results reveal that the two-dominant edge structures, ZZ and AC, induce the formation of different amounts of localized strain fields. We also show that by varying the free edge curvature from concave to convex, compressive strain turns into tensile strain. These results pave the way toward the customization of edge structures in MoS2, which can be used to engineer the properties of layered materials and thus contribute to the optimization of the next generation of atomic-scale electronic devices built upon them.
Keyword:
Transition-metal dichalcogenides
edge structures
strain
aberration-corrected transmission electron microscopy
electron energy loss spectroscopy
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期刊

Nano Letters 封面图
Nano Letters
IF:
9.1
论文数:
2.7W
被引数:
16.5W

机构

D
Delft University of Technology
学者数:
2.6W
论文数: 2.5W
被引数: 3.8W
J
jeol ltd
学者数:
350
论文数: 395
被引数: 2
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