Thin ferroelectric materials for memory devices

N Williams

doi:10.1088/2053-1583/adfa31

2025-08-21

DOI：10.1088/2053-1583/adfa31

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摘要

En 中文

铁电材料已成为下一代电子技术的关键候选材料，具有非易失性开关、低功耗运行和多功能特性。铁电材料在互补金属氧化物半导体基技术中充分发挥其潜力的实现，需要在性能、可扩展性和工业可行性之间取得谨慎的平衡。本文从评述角度对主要的铁电材料类别进行了批判性评估，突出了其独特优势及持续的集成挑战。我们强调了原子级结构在决定功能行为中的核心作用，并讨论了先进计量学（尤其是扫描透射电子显微镜）对于直接可视化畴动力学、缺陷和界面现象的重要性，所有这些都会影响铁电特性。我们指出了当前在制备、材料设计和性能基准测试方面的局限性，并概述了战略途径以填补知识空白，加速铁电材料从基础研究到可扩展、实际应用的过渡。

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期刊

2D Materials

IF:

4.3

论文数:

228

被引数:

9.8K

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引用论文

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