TiO2-based structures for nanoscale memory applications

K. Fröhlich

doi:10.1016/j.mssp.2012.11.013

2013-10-01

PRE

K. Fröhlich *

DOI：10.1016/j.mssp.2012.11.013

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摘要

En 中文

TiO2-based metal-insulator-metal (MIM) structures have attracted considerable attention due to their possible application in memory devices. In our review we summarize advances in preparation of TiO2 thin films focusing on atomic layer deposition, ALD. ALD is considered the most promising technology for memory application. We describe development of TiO2-based capacitors for dynamic random access memory, DRAM. It is concluded, that the TiO2-based capacitors may fulfill requirements for the 20 nm DRAM generation and beyond. Finally, current status in resistive switching in TiO2-based MIM structures is presented. Recent advances in the understanding of the resistive switching phenomena indicate their potential for use in memory devices. (C) 2013 Elsevier Ltd. All rights reserved.

Keyword:

Thin oxide films

Atomic layer deposition

DRAM

Resistive switching

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期刊

Materials Science in Semiconductor Processing

IF:

4.6

论文数:

1.0W

被引数:

2.2W

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