K. Fröhlich - Publications, H-index & Citations

K. Fröhlich

Centre for Advanced Materials Application

27H指数

222论文数

2.4K被引数

收录论文 40

发表时间

Enhanced Performance of LiFePO4 Cathodes with Alumina Nanocoating by Atomic Layer Deposition: Insights from Electrochemical; Operando X-ray Diffraction; and X-ray Photoelectron Spectroscopy Analyses 通过原子层沉积的氧化铝纳米涂层提高LiFePO4正极性能：电化学、原位X射线衍射和X射线光电子能谱分析的见解

ACS Applied Energy Materials

IF5.5

2025-07-11

PREAI

Prangya P. Sahoo; Boris Hudec; Matej Mičušík; Miroslav Mikolášek; Magdaléna Precnerová; Peter Švec Jr.; Peter Nádaždy; Simon Mičky; Muhammad Zubair; Peter Siffalovic; Karol Fröhlich

Silicon/Graphite Anode Performance Improvement: A Combination of Atomic Layer-Deposited ZnO Coatings with a Fluoroethylene Carbonate Additive 硅/石墨负极性能提升：原子层沉积ZnO涂层与氟乙烯碳酸酯添加剂的组合

ACS APPLIED ENERGY MATERIALS

IF5.5

2025-05-17

PREAI

Sahoo, PP; Güneren, A; Hudec, B; Micusík, M; Svec, P Jr; Precnerová, M; Nada, A; Lencés, Z; Fröhlich, K

Stabilization of the Solid-Electrolyte-Interphase Layer and Improvement of the Performance of Silicon-Graphite Anodes by Nanometer-Thick Atomic-Layer-Deposited ZnO Films 通过纳米厚的原子层沉积的ZnO膜稳定固体电解质相间层并改善硅石墨阳极的性能

ACS APPLIED NANO MATERIALS

IF5.5

2024-02-10

PREAI

Sahoo, Prangya P.; Guneren, Alper; Hudec, Boris; Mikolasek, Miroslav; Nada, Ahmed; Precnerova, Magdalena; Micusik, Matej; Lences, Zoltan; Nadazdy, Peter; Frohlich, Karol

Si-Based Metal-Insulator-Semiconductor Structures with RuO2-(IrO2) Films for Photoelectrochemical Water Oxidation 具有RuO2-(IrO2) 薄膜的硅基金属-绝缘体-半导体结构用于光电化学水氧化

ACS APPLIED ENERGY MATERIALS

IF5.5

2021-10-08

PREAI

Sahoo, Prangya P.; Mikolasek, Miroslav; Husekova, Kristina; Dobrocka, Edmund; Soltys, Jan; Ondrejka, Peter; Kemeny, Martin; Harmatha, Ladislav; Micusik, Matej; Frohlich, Karol

Growth of lithium hydride thin films from solutions: Towards solution atomic layer deposition of lithiated films 从溶液中生长氢化锂薄膜: 锂化薄膜的溶液原子层沉积

BEILSTEIN JOURNAL OF NANOTECHNOLOGY

IF2.7

2019-07-18

OAAI

Kundrata, Ivan; Frohlich, Karol; Vanco, Lubomir; Micusik, Matej; Bachmann, Julien

Operando diagnostic detection of interfacial oxygen breathing' of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy

MATERIALS RESEARCH LETTERS

IF7.9

2019-01-04

OAAI

Niu, Gang; Calka, Pauline; Huang, Peng; Sharath, Sankaramangalam Ulhas; Petzold, Stefan; Gloskovskii, Andrei; Frohlich, Karol; Zhao, Yudi; Kang, Jinfeng; Schubert, Markus Andreas; Baerwolf, Florian; Ren, Wei; Ye, Zuo-Guang; Perez, Eduardo; Wenger, Christian; Alff, Lambert; Schroeder, Thomas

Silicon based MIS photoanode for water oxidation: A comparison of RuO2 and Ni Schottky contacts 用于水氧化的硅基MIS光阳极: RuO2和Ni肖特基接触的比较

APPLIED SURFACE SCIENCE

IF6.9

2018-12-01

PREAI

Mikolasek, Miroslav; Frohlich, Karol; Husekova, Kristina; Racko, Juraj; Rehacek, Vlastimil; Chymo, Filip; Tapajna, Milan; Harmatha, Ladislav

Characterization of interface states in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors with HfO2 gate dielectric grown by atomic layer deposition

APPLIED SURFACE SCIENCE

IF6.9

2018-12-01

PREAI

Stoklas, R.; Gregusova, D.; Hasenohrl, S.; Brytavskyi, E.; Tapajna, M.; Frohlich, K.; Hascik, S.; Gregor, M.; Kuzmik, J.

Investigation of 'surface donors' in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties

APPLIED SURFACE SCIENCE

IF6.9

2017-12-01

PREAI

Tapajna, M.; Stoklas, R.; Gregusova, D.; Gucmann, F.; Husekova, K.; Hascik, S.; Frohlich, K.; Toth, L.; Pecz, B.; Brunner, F.; Kuzmik, J.

Annealing, temperature, and bias-induced threshold voltage instabilities in integrated E/D-mode InAlN/GaN MOS HEMTs

APPLIED PHYSICS LETTERS

IF3.6

2017-07-20

PREAI

Blaho, M.; Gregusova, D.; Hascik, S.; Tapajna, M.; Frohlich, K.; Satka, A.; Kuzmik, J.

Interface engineered HfO2-based 3D vertical ReRAM 界面工程HfO2-based 3D垂直ReRAM

JOURNAL OF PHYSICS D-APPLIED PHYSICS

IF3.2

2016-04-29

PREAI

Hudec, Boris; Wang, I-Ting; Lai, Wei-Li; Chang, Che-Chia; Jancovic, Peter; Frohlich, Karol; Micusik, Matej; Omastova, Maria; Hou, Tuo-Hung

3D resistive RAM cell design for high-density storage class memory-a review

SCIENCE CHINA-INFORMATION SCIENCES

IF7.6

2016-03-09

PREAI

Hudec, Boris; Hsu, Chung-Wei; Wang, I-Ting; Lai, Wei-Li; Chang, Che-Chia; Wang, Taifang; Frohlich, Karol; Ho, Chia-Hua; Lin, Chen-Hsi; Hou, Tuo-Hung

InGaAs/GaAs metal-oxide-semiconductor heterostructure field-effect transistors with oxygen-plasma oxide and Al2O3 double-layer insulator

APPLIED PHYSICS LETTERS

IF3.6

2014-11-03

PREAI

Gucmann, F.; Gregusova, D.; Stoklas, R.; Derer, J.; Kudela, R.; Froehlich, K.; Kordos, P.

Adjustment of threshold voltage in AlN/AlGaN/GaN high-electron mobility transistors by plasma oxidation and Al2O3 atomic layer deposition overgrowth

APPLIED PHYSICS LETTERS

IF3.6

2014-01-09

PREAI

Gregusova, D.; Jurkovic, M.; Hascik, S.; Blaho, M.; Seifertova, A.; Fedor, J.; Tapajna, M.; Froehlich, K.; Vogrincic, P.; Liday, J.; Derluyn, J.; Germain, M.; Kuzmik, J.

TiO2-based structures for nanoscale memory applications

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2013-10-01

PREAI

Froehlich, K.

Structural and dielectric properties of Ru-based gate/Hf-doped Ta2O5 stacks Ru基栅/Hf掺杂Ta2O5叠层的结构和介电性能

APPLIED SURFACE SCIENCE

IF6.9

2011-06-01

PREAI

Paskaleva, A.; Tapajna, M.; Dobrocka, E.; Husekova, K.; Atanassova, E.; Froehlich, K.

Thermal stability of GdScO3 and LaLuO3 films prepared by liquid injection MOCVD

VACUUM

IF3.9

2009-08-01

PREAI

Vincze, A.; Luptak, R.; Husekova, K.; Dobrocka, E.; Frohlich, K.

Effect of Ti doping on Ta2O5 stacks with Ru and Al gates

APPLIED SURFACE SCIENCE

IF6.9

2008-07-01

PREAI

Paskaleva, A.; Tapajna, M.; Atanassova, E.; Frohlich, K.; Vincze, A.; Dobrocka, E.

Gate insulation and drain current saturation mechanism in InAlN/GaN metal-oxide-semiconductor high-electron-mobility transistors

APPLIED PHYSICS LETTERS

IF3.6

2007-07-25

PREAI

Pozzovivo, G.; Kuzmik, J.; Golka, S.; Schrenk, W.; Strasser, G.; Pogany, D.; Cico, K.; Tapajna, M.; Froeöhlich, K.; Carlin, J.-F.; Gonschorek, M.; Feltin, E.; Grandjean, N.

Characterization of rare earth oxides based MOSFET gate stacks prepared by metal-organic chemical vapour deposition

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING

IF4.6

2006-12-01

PREAI

Frohlich, K.; Luptak, R.; Dobrocka, E.; Husekova, K.; Cico, K.; Rosova, A.; Lukosius, M.; Abrutis, A.; Pisecny, P.; Espinos, J. P.

研究方向