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Transistor Modeling
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DOI：10.1109/MMM.2013.2248593.png)
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摘要
En
Keyword:
SIGNAL EQUIVALENT-CIRCUIT
ELECTRON-MOBILITY TRANSISTORS
INTERFACIAL GATE RESISTANCE
FIELD-EFFECT TRANSISTORS
PARAMETER-EXTRACTION
HEMTS
ALGORITHM
ELEMENTS
DEVICES
SILICON
期刊
IF:
2.6
论文数:
3.2K
被引数:
3.1K
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