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C

C. R. Bolognesi

millimeter-wave electronics group (mwe), eth zürich, zürich, switzerland

35H指数
277论文数
4.0K被引数
收录论文 20
发表时间
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94-GHz Four-Way Combined Power Amplifiers With 19.2-dBm Output Power in 250-nm InP/GaAsSb DHBT Technology94-GHz四路组合功率放大器，具有19.2-dBm输出功率，采用250-nm InP/GaAsSb DHBT技术
errIEEE Microwave and Wireless Technology Letters
IF3.4
err2025-11-14
err0
PREAI
errSara Hamzeloui; Akshay M. Arabhavi; Filippo Ciabattini; Mojtaba Ebrahimi; Giorgio Bonomo; Andrea Cercaci; Olivier Ostinelli; Colombo R. Bolognesi
err分享
err收藏
Wideband Type-II GaInAsSb/InP Uni-Traveling Carrier Photodiodes for Near 300 Gbps Communications用于近300 Gbps通信的宽带II型GaInAsSb/InP单行进载波光电二极管
errJOURNAL OF LIGHTWAVE TECHNOLOGY
IF4.8
err2024-04-15
err2
errOAAI
errChaudhary, Rimjhim; Arabhavi, Akshay M.; Kulmer, Laurenz; Hamzeloui, Sara; Leich, Martin; Ostinelli, Olivier; Leuthold, Juerg; Bolognesi, Colombo R.
err分享
err收藏
High Power InP/Ga(In)AsSb DHBTs for Millimeter-Wave PAs: 14.5 dBm Output Power and 10.4 mw/μm2 Power Density at 94 GHz
errIEEE JOURNAL OF MICROWAVES
IF4.9
err2022-10-01
err7
errOAAI
errHamzeloui, Sara; Arabhavi, Akshay M.; Ciabattini, Filippo; Fluckiger, Ralf; Marti, Diego; Ebrahimi, Mojtaba; Ostinelli, Olivier; Bolognesi, Colombo R.
err分享
err收藏
CYRILLIC CAPITAL LETTER GHE-L intervalley separation and electron mobility in GaAsSb grown on InP: Transport comparison with the GaInAs and GaInAsSb alloys
errAPPLIED PHYSICS LETTERS
IF3.6
err2021-12-13
err8
errOAAI
errBolognesi, C. R.; Ostinelli, O. J. S.
err分享
err收藏
Type-II GaInAsSb/InP Uniform Absorber High Speed Uni-Traveling Carrier Photodiodes
errJOURNAL OF LIGHTWAVE TECHNOLOGY
IF4.8
err2021-04-01
err13
errOAAI
errArabhavi, Akshay M.; Chaudhary, Rimjhim; Flueckiger, Ralf; Marti, Diego; Hamzeloui, Sara; Ciabattini, Filippo; Quan, Wei; Leich, Martin; Ostinelli, Olivier; Bolognesi, C. R.
err分享
err收藏
n+-GaN grown by ammonia molecular beam epitaxy: Application to regrown contacts
errAPPLIED PHYSICS LETTERS
IF3.6
err2014-11-20
err26
PREAI
errLugani, L.; Malinverni, M.; Tirelli, S.; Marti, D.; Giraud, E.; Carlin, J. -F.; Bolognesi, C. R.; Grandjean, N.
err分享
err收藏
Transistor Modeling
errIEEE MICROWAVE MAGAZINE
IF2.6
err2013-06-01
err85
PREAI
errAlt, Andreas R.; Marti, Diego; Bolognesi, C. R.
err分享
err收藏
Evaluation and Reduction of Calibration Residual Uncertainty in Load-Pull Measurements at Millimeter-Wave Frequencies
errIEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT
IF5.9
err2012-03-01
err14
PREAI
errTeppati, Valeria; Bolognesi, C. R.
err分享
err收藏
Electrostatic Actuation and Electromechanical Switching Behavior of One-Dimensional Nanostructures
errACS NANO
IF16
err2009-09-09
err25
PREAI
errSubramanian, Arunkumar; Alt, Andreas R.; Dong, Lixin; Kratochvil, Bradley E.; Bolognesi, Colombo R.; Nelson, Bradley J.
err分享
err收藏
Anomalous behavior of AlGaN/GaN heterostructure field-effect transistors at cryogenic temperatures: From current collapse to current enhancement with cooling
errAPPLIED PHYSICS LETTERS
IF3.6
err2007-03-20
err36
PREAI
errSun, H. F.; Bolognesi, C. R.
err分享
err收藏
Ozone passivation of slow transient current collapse in AlGaN/GaN field-effect transistors: The role of threading dislocations and the passivation mechanism
errAPPLIED PHYSICS LETTERS
IF3.6
err2006-01-04
err26
PREAI
errDiSanto, DW; Sun, HF; Bolognesi, CR
err分享
err收藏
Neutral base recombination in InP/GaAsSb/InP double-heterostructure bipolar transistors:: Suppression of Auger recombination in p+ GaAsSb base layers -: art. no. 253506
errAPPLIED PHYSICS LETTERS
IF3.6
err2005-06-15
err15
PREAI
errBolognesi, CR; Liu, HG; Tao, N; Zhang, X; Bagheri-Najimi, S; Watkins, SP
err分享
err收藏
Characterization of InP electron-initiated impact ionization in low electric fields using abrupt junction NpNInP/GaAsSb/InP double heterojunction bipolar transistors
errAPPLIED PHYSICS LETTERS
IF3.6
err2003-12-29
err1
PREAI
errLam, S; Bolognesi, CR; Watkins, SP
err分享
err收藏
Local vibrational modes of carbon in GaSb and GaAsSb
errAPPLIED PHYSICS LETTERS
IF3.6
err2002-03-18
err16
PREAI
errChen, XK; Wiersma, R; Wang, CX; Pitts, OJ; Dale, C; Bolognesi, CR; Watkins, SP
err分享
err收藏
Anisotropic resistivity correlated with atomic ordering in p-type GaAsSb
errAPPLIED PHYSICS LETTERS
IF3.6
err2001-10-08
err34
PREAI
errFink, V; Chevalier, E; Pitts, OJ; Dvorak, MW; Kavanagh, KL; Bolognesi, CR; Watkins, SP; Hummel, S; Moll, N
err分享
err收藏
Smooth wet etching by ultraviolet-assisted photoetching and its application to the fabrication of AlGaN/GaN heterostructure field-effect transistors
errAPPLIED PHYSICS LETTERS
IF3.6
err2000-12-04
err40
PREAI
errMaher, H; DiSanto, DW; Soerensen, G; Bolognesi, CR; Tang, H; Webb, JB
err分享
err收藏
Metalorganic vapor phase epitaxy of high-quality GaAs0.5Sb0.5 and its application to heterostructure bipolar transistors
errAPPLIED PHYSICS LETTERS
IF3.6
err1999-02-15
err31
PREAI
errXu, XG; Hu, J; Watkins, SP; Matine, N; Dvorak, MW; Bolognesi, CR
err分享
err收藏
Large photoluminescence enhancements from epitaxial GaAs passivated by postgrowth phosphidization
errAPPLIED PHYSICS LETTERS
IF3.6
err1997-06-16
err18
PREAI
errHarrison, DA; Ares, R; Watkins, SP; Thewalt, MLW; Bolognesi, CR; Beckett, DJS; SpringThorpe, AJ
err分享
err收藏
InAs channel heterostructure-field effect transistors with InAs/AISb short-period superlattice barriers
errAPPLIED PHYSICS LETTERS
IF3.6
err1996-12-02
err8
PREAI
errBolognesi, CR; Bryce, JE; Chow, DH
err分享
err收藏
Length dependence of quantized conductance in ballistic constrictions fabricated on InAs/AlSb quantum wells
errPHYSICAL REVIEW B
IF3.7
err1996-05-15
err36
PREAI
errKoester, SJ; Brar, B; Bolognesi, CR; Caine, EJ; Patlach, A; Hu, EL; Kroemer, H
err分享
err收藏

研究方向

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合作学者
合作期刊
B
Bradley J. Nelson
H 指数: 111 · 论文数: 1.4K
J
Juerg Leuthold
H 指数: 83 · 论文数: 972
N
N. Grandjean
H 指数: 71 · 论文数: 787
E
Evelyn L. Hu
H 指数: 70 · 论文数: 564
H
H. Kroemer
H 指数: 63 · 论文数: 373
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