.png){kind=icon}
返回
Two silicon optical modulators realizable with a fully compatible bipolar process
.png){kind=icon}
PRE
AI
DOI：10.1109/2944.736098.png)
.png){kind=icon}
原文求助.png){kind=icon}
分享.png){kind=icon}
收藏
摘要
En 中文
In this paper, we describe two different kinds of silicon optical modulators both integrated into a silicon on silicon optical channel waveguide which can be realized using a standard bipolar process. The possibility of using standard, well-known technology presents several advantages with respect to III-V optoelectronics. The first device presented is based on a three-terminal active device and exploits the plasma dispersion effect to achieve the desired modulation. The active device used is a bipolar mode field effect transistor; we show how the introduction of the third control terminal introduces some definite advantages with respect to commonly p-i-n driven modulators, The second is an electrically controlled Bragg reflector, In this case, although controlled by a p-i-n diode, fast switching speed is achieved because lower injection levels are required. Numerical simulations and preliminary experimental results are presented on both devices.
Keyword:
gratings
integrated optoelectronics
optical waveguides
optoelectronic devices
AI总结
对已上传原文的论文进行重点信息的提取，主要内容包括：简要概述、研究摘要、背景介绍、关键亮点、图文解析、展望与总结。
期刊
I
IF:
5.1
论文数:
5.6K
被引数:
1.2W
机构
暂无机构信息
引用论文
Effect of Cell Size on in Vitro Fatty Acid and Glyceride-Glycerol Biosynthesis in Rat Adipose Tissue细胞大小对大鼠脂肪组织中体外脂肪酸和甘油酯-甘油生物合成的影响
.png){kind=icon}
PREAI
分享收藏分享收藏分享收藏分享收藏分享收藏
查看更多内容