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Ultrathin amorphous-Ga2O3 vertical SBD-based bridge rectifier and its hybrid buck system
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DOI：10.1088/1674-4926/25100008.png)
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Abstract
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This paper demonstrated a monolithically integrated 200 nm-ultrathin amorphous-Ga2O3 vertical SBD-based bridge rectifier and its hybrid buck conversion system with a Si-MOSFET. The fabricated vertical Ga2O3 SBD exhibits excellent characteristics and a high breakdown electric field strength of 1.35 MV/cm. The bridge rectifier circuit maintains stable operation at high frequencies of 50 kHz. And the hybrid buck system composed of the Ga2O3 bridge rectifier and Si-MOSFET achieves adjustable step-down voltage output under the conditions of a 20 kHz switching frequency of Si-MOSFET and 50 Hz Vin. This work validates the practical value of Ga2O3 rectifiers in high-frequency conversion systems.
Keywords:
ultrathin amorphous-Ga2O3
vertical SBD
bridge rectifier
hybrid buck system
high-frequency conversion
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277
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