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1.1 kV/0.72 GW/cm2 β-Ga2O3 Fin-channel diode with ohmic contacts anode
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DOI：10.1088/1674-4926/25050032.png)
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Abstract
En 中文
This study presents a β-Ga2O3 diode featuring a Fin-channel structure and an anode ohmic contact. The device turn-off is facilitated by the depletion effect induced by the work function difference between the sidewall metal and β-Ga2O3. As the forward bias increases, electron accumulation occurs on the Fin-channel sidewalls, reducing the on-resistance and improving the forward characteristics. Moreover, the device exhibits the reduced surface field (RESURF) effect, similar to trench schottky barrier diodes (SBDs), which shifts the electric field at the fin corners and enhances the breakdown voltage. For a device with a 100 nm fin width (Wfin), we achieved a breakdown voltage (BV) of 1137 V, a specific on-resistance (Ron,sp) of 1.8 mΩ·cm2, and a power figure of merit (PFOM) of 0.72 GW/cm2. This work expands the fabrication approach for β-Ga2O3-based devices, advancing their potential for high-performance applications.
Keywords:
β-Ga2O3
Fin-channel diode
Ohmic contact
Breakdown voltage
Power figure of merit
Journal
IF:
5.3
Papers:
277
Citations:
4.0K
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Cited Papers