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1800 V/20 A E-Mode GaN PSJ-HEMTs
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DOI：10.1109/led.2026.3698419.png)
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Abstract
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We report 1800 V/20 A enhancement-mode GaN-on-sapphire polarization super-junction HEMTs. The fabricated devices demonstrate a low on-resistance of 87 m<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Omega $ </tex-math></inline-formula>, a low specific on-resistance of 4.6 m<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Omega \cdot $ </tex-math></inline-formula>cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup>, a high breakdown voltage exceeding 1900 V, and state-of-the-art Baliga’s figure of merit of over 785 MW/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> among ampere-level E-mode HEMTs. Furthermore, a high ON/OFF ratio of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\sim\!\!10^{{10}}$ </tex-math></inline-formula> and a low hysteresis voltage of 80 mV are characterized, together with a minimized threshold voltage shift under positive gate bias stress at elevated temperatures. These results can pave the way for developing high-performance, cost-effective, high-voltage, and high-power GaN power devices.
Keywords:
GaN
E-mode
p-GaN HEMTs
polarization super-junction
breakdown voltage
electric field
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