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2D materials-based flash memory device: mechanism; structure; application
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DOI：10.1039/D5MH00803D.png)
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Abstract
En 中文
Flash memory has become a foundational technology in modern electronic systems due to its non-volatility and high density. Traditional flash architectures; including NOR and NAND; rely on two primary memory cell structures; floating-gate and charge-trap transistors; which face increasing challenges in performance. Recently; 2D materials have emerged as promising candidates to overcome the limitations of conventional flash memory. Owing to their atomically thin nature; superior electrical properties; and excellent electrostatic control; 2D materials offer significant advantages in both floating-gate and charge-trap flash cells; enabling improvements in program/erase speed; data retention; and endurance. This review provides a comprehensive overview of the integration of 2D materials into flash memory technologies; focusing on their role in enhancing performance and enabling large-scale integration. Furthermore; the unique optoelectronic properties of 2D materials introduce exciting opportunities for multifunctional flash memory applications; such as neuromorphic computing. Despite remarkable progress; challenges such as material uniformity; CMOS compatibility and EDA platform adaptation remain. This review concludes by discussing current limitations and proposing future research directions toward realizing high-performance; scalable; and multifunctional 2D material-based flash memory.
Keywords:
2D materials
flash memory
charge-trap transistors
non-volatility
neuromorphic computing
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