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SaveShare Save Ferroelectric Compensation Effect of the Hard Electrode for the HfO2-ZrO2 Superlattice Films at the Low-Annealing Temperature
Zhu, CQ; Bai, N; Wang, YF; Sun, HJ; Zou, LQ; Yi, YH; Xu, JY; Ren, JW; Zhang, JM; Hu, S; Xue, KH; Ye, L; Cheng, WM; He, Q; Miao, XS Share Save An ion-gating synaptic memristor based on tri-layer HfOx composition regulationZou, Lanqing; Zhang, Junming; Yi, Yunhui; Ren, Jiawang; Sun, Huajun; Zhu, Chuqian; Xu, Jiyang; Hu, Sheng; Ye, Lei; Cheng, Weiming; He, Qiang; Miao, Xiangshui Share Save Tuning ferroelectric domains and polarization properties of flexible BiFeO3 thin films by phase transition engineeringHe, Jia; Xiao, Shibing; Sui, Huiting; Wu, Fuling; Li, Xiao; Yang, Cheng; Gong, Piyu; Zhu, Jianing; Liu, Xiaofang; Sun, Huajun Share Save Phase transition kinetics and sublayer optimization of HfO2/ZrO2 superlattice ferroelectric thin filmsWang, Yufan; Zhu, Chuqian; Sun, Huajun; Wang, Wenlin; Zou, Lanqing; Yi, Yunhui; Xu, Jiyang; Ren, Jiawang; Hu, Sheng; Ye, Lei; Cheng, Weiming; He, Qiang; Miao, Xiangshui Share Save Share Save Ferroelectricity in HfO2 from a Coordination Number PerspectiveYuan, Jun-Hui; Mao, Ge-Qi; Xue, Kan-Hao; Bai, Na; Wang, Chengxu; Cheng, Yan; Lyu, Hangbing; Sun, Huajun; Wang, Xingsheng; Miao, Xiangshui Share Save Evolution of the conductive filament system in HfO2-based memristors observed by direct atomic-scale imagingZhang, Ying; Mao, Ge-Qi; Zhao, Xiaolong; Li, Yu; Zhang, Meiyun; Wu, Zuheng; Wu, Wei; Sun, Huajun; Guo, Yizhong; Wang, Lihua; Zhang, Xumeng; Liu, Qi; Lv, Hangbing; Xue, Kan-Hao; Xu, Guangwei; Miao, Xiangshui; Long, Shibing; Liu, Ming Share Save Share Save Novel III-V semiconductor epitaxy for optoelectronic devices through two-dimensional materialsZhao, Chao; Li, Zhaonan; Tang, Tianyi; Sun, Jiaqian; Zhan, Wenkang; Xu, Bo; Sun, Huajun; Jiang, Hui; Liu, Kong; Qu, Shengchun; Wang, Zhijie; Wang, Zhanguo Share Save Homo-layer hafnia-based memristor with large analog switching windowBai, Na; Tian, Baoyi; Mao, Ge-Qi; Xue, Kan-Hao; Wang, Tao; Yuan, Jun-Hui; Liu, Xiaoxin; Li, Zhaonan; Guo, Shen; Zhou, Zuopai; Liu, Nian; Lu, Hong; Tang, Xiaodong; Sun, Huajun; Miao, Xiangshui Share Save Nonvolatile Resistive Switching Memory Device Employing CdSe/CdS Core/Shell Quantum Dots as an Electrode Modification LayerGuo, Jianwei; Guo, Shen; Su, Xiaoming; Zhu, Sheng; Pang, Yue; Luo, Wei; Zhang, Jianbing; Sun, Huajun; Li, Honglang; Zhang, Daoli Share Save Performance enhancement of TaOx resistive switching memory using graded oxygen contentWang, B.; Xue, K. H.; Sun, H. J.; Li, Z. N.; Wu, W.; Yan, P.; Liu, N.; Tian, B. Y.; Liu, X. X.; Miao, X. S. Share Save Share Save Realization of Functional Complete Stateful Boolean Logic in Memristive CrossbarLi, Yi; Zhou, Ya-Xiong; Xu, Lei; Lu, Ke; Wang, Zhuo-Rui; Duan, Nian; Jiang, Lei; Cheng, Long; Chang, Ting-Chang; Chang, Kuan-Chang; Sun, Hua-Jun; Xue, Kan-Hao; Miao, Xiang-Shui Share Save Share Save Conducting mechanisms of forming-free TiW/Cu2O/Cu memristive devicesYan, P.; Li, Y.; Hui, Y. J.; Zhong, S. J.; Zhou, Y. X.; Xu, L.; Liu, N.; Qian, H.; Sun, H. J.; Miao, X. S. Share Save Share Save Share Save 
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