1
Return

A High-Throughput True Random Number Generator Based on the Competitive Turn-On of OTS Devices

delete2026-06-08
delete0
PRE
AI
D
Dejiang Mu
H
Huan Wang
N
Nan Li
K
Keqin Li
Y
Yujian Zhong
P
Pan Liu
M
Ming Xu
X
Xiangshui Miao
X
Xingsheng Wang
DOI:10.1109/led.2026.3698689delete
deleteOriginal
deleteOriginal request for help
deleteShare
deleteSave
Abstract

Abstract

En 中文
Low-power, high-throughput true random number generators (TRNGs) are indispensable primitives for ensuring high security and reliability in edge-data encryption. In this work, we propose a TRNG that leverages competitive conduction between two InTe<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> ovonic threshold switching (OTS) devices as an entropy source and extracts randomness through positive feedback in a CMOS cross-coupled pair. The proposed design achieves a throughput of 2.38 Mbps with an energy consumption of 483 pJ/bit. The randomness of the output bits is verified using the NIST SP800-22 and NIST SP800-90B statistical test suite. These results underscore the potential of the proposed TRNG for secure edge applications.
Keywords:
True random number generator
ovonic threshold switching
memristors
edge computing

Journal

IEEE Electron Device Letters cover
IEEE Electron Device Letters
IF:
4.5
Papers:
614
Citations:
2.3W

Organization

H
huazhong university of science and technology
Scholars:
2.3W
Papers: 7.2K
Citations: 5
Cited Papers

Cited Papers

Citing Papers

Citing Papers