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A Ruthenium-Coated Low-Adhesion Nanogap MEMS Switch With 2.5-V Actuation, 27-ns Switching, and Ω-Level Contact Resistance
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DOI：10.1109/led.2026.3702582.png)
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Abstract
En 中文
Power gating reduces standby leakage in highly integrated CMOS systems, however, CMOS sleep transistors introduce area overhead and residual leakage. MEMS switches are attractive alternatives because an air gap suppresses off-state leakage and metal-to-metal contact provides low on-state resistance. However, achieving low-voltage actuation, fast switching, low resistance, and turn-off recovery remains challenging. Nanogap scaling reduces switching time and contact resistance, but also aggravates stiction as the restoring force decreases with the gap; increasing the spring constant improves recovery but raises the actuation voltage. This letter demonstrates a ruthenium-coated nanogap MEMS switch that lowers contact adhesion instead of relying on a high restoring force. A native ruthenium oxide layer on ruthenium suppresses metallic bonding at the contact interface. The fabricated switch with a 10-nm source–drain gap turns on at 2.5 V and exhibits 2.29-<inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Omega $ </tex-math></inline-formula> contact resistance and 27-ns switching time. The device recovered to the off state for up to <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${3}\times {10} ^{{7}}$ </tex-math></inline-formula> cold-switching cycles before failure by stiction. These results demonstrate low-voltage operation, ultrafast switching, and <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\Omega $ </tex-math></inline-formula>-level contact resistance in a nanogap mechanical switch.
Keywords:
Power gating
MEMS switch
nanogap
Ru contact
stiction
contact resistance
low-voltage actuation
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