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AlGaN-Based UV LEDs With High Wall-Plug Efficiency
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DOI：10.1109/led.2026.3698638.png)
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Abstract
En 中文
AlGaN-based ultraviolet light-emitting diodes (UV LEDs) are considered promising solid-state UV light sources; however, their low wall-plug efficiency (WPE) has remained a major barrier to practical implementation. In this work, we designed the epitaxial structure and growth conditions for MOCVD-grown AlGaN-based UV LEDs to achieve coherent growth of the AlGaN layers and the formation of low-areal-density p-GaN islands. We further developed a processing approach to address the limited light extraction associated with highly efficient AlGaN-based UV LED epitaxial structures. A mirror p-contact and an ohmic-like n-contact were co-optimized to achieve high reflectance and reliable electrical contacts in UV LEDs with low p-GaN areal coverage, and a flip-chip geometry was adopted to further improve light extraction. High WPE of the UV LEDs was demonstrated under continuous-wave (CW) current injection. A peak WPE of 19.0% at 0.09 A/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> and a WPE of 7.4% at 10 A/cm<sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> were achieved for UV LED emitting at 298 nm.
Keywords:
Wall-plug efficiency
ultraviolet LED
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