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Atomic layer bonding contacts in two-dimensional semiconductors
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DOI：10.1126/science.adz2405.png)
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Abstract
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Electrical contact between two-dimensional semiconductors and metals is usually weak because of weak band coupling and low bond strength. Gao et al. created a strong electrical contact between a gold electrode and molybdenum disulfide (MoS2) by using an ultrasoft argon plasma to etch away the topmost layer of sulfur to expose the molybdenum atoms. The researchers used this approach to fabricate MoS2 transistors that had contact resistances as low as 70 ohm·micrometer and were stable to temperatures as high as 400°C. —Phil Szuromi
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