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SaveShare Save Share Save Share Save Share Save Share Save Share Save Share Save Share Save High-Spike Barrier Photodiodes Based on 2D Te/WS2 Heterostructures
Yu, Huihui; Wang, Yunan; Zeng, Haoran; Cao, Zhihong; Zhang, Qinghua; Gao, Li; Hong, Mengyu; Wei, Xiaofu; Zheng, Yue; Zhang, Zheng; Zhang, Xiankun; Zhang, Yue Share Save Share Save Gradient-Strained Van Der Waals Heterojunctions for High-Efficient PhotodetectorsZeng, Haoran; Yu, Huihui; Liu, Baishan; Lu, Shucao; Wei, Xiaofu; Gao, Li; Hong, Mengyu; Zhang, Xiankun; Zhang, Zheng; Zhang, Yue Share Save Homojunction-loaded inverters based on self-biased molybdenum disulfide transistors for sub-picowatt computingWei, Xiaofu; Zhang, Xiankun; Yu, Huihui; Gao, Li; Tang, Wenhui; Hong, Mengyu; Chen, Zhangyi; Kang, Zhuo; Zhang, Zheng; Zhang, Yue Share Save Share Save Deciphering Vacancy Defect Evolution of 2D MoS2 for Reliable TransistorsGao, Li; Zhang, Xiankun; Yu, Huihui; Hong, Mengyu; Wei, Xiaofu; Chen, Zhangyi; Zhang, Qinghua; Liao, Qingliang; Zhang, Zheng; Zhang, Yue Share Save Share Save Share Save Solution-processed thickness engineering of tellurene for field-effect transistors and polarized infrared photodetectorsChen, Fangfang; Cao, Dingwen; Li, Juanjuan; Yan, Yong; Wu, Di; Zhang, Cheng; Gao, Lenan; Guo, Zhaowei; Ma, Shihong; Yu, Huihui; Lin, Pei Share Save All-van-der-Waals Barrier-Free Contacts for High-Mobility Transistors (vol 33, 2109521, 2021)Zhang, Xiankun; Yu, Huihui; Tang, Wenhui; Wei, Xiaofu; Gao, Li; Hong, Mengyu; Liao, Qingliang; Kang, Zhuo; Zhang, Zheng; Zhang, Yue Share Save Share Save 
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