.png){kind=icon}
.png){kind=icon}
Return
Atomic Precision Processing of Two-Dimensional Materials for Next-Generation Microelectronics
.png){kind=icon}
PRE
AI
DOI：10.1021/acsnano.4c04908.png)
.png){kind=icon}
Original request for help.png){kind=icon}
Share.png){kind=icon}
Save
Abstract
En 中文
The growth of the information era economy is driving the pursuit of advanced materials for microelectronics, spurred by exploration into Beyond CMOS and More than Moore paradigms. Atomically thin 2D materials, such as transition metal dichalcogenides (TMDCs), show great potential for next-generation microelectronics due to their properties and defect engineering capabilities. This perspective delves into atomic precision processing (APP) techniques like atomic layer deposition (ALD), epitaxy, atomic layer etching (ALE), and atomic precision advanced manufacturing (APAM) for the fabrication and modification of 2D materials, essential for future semiconductor devices. Additive APP methods like ALD and epitaxy provide precise control over composition, crystallinity, and thickness at the atomic scale, facilitating high-performance device integration. Subtractive APP techniques, such as ALE, focus on atomic-scale etching control for 2D material functionality and manufacturing. In APAM, modification techniques aim at atomic-scale defect control, offering tailored device functions and improved performance. Achieving optimal performance and energy efficiency in 2D material-based microelectronics requires a comprehensive approach encompassing fundamental understanding, process modeling, and high-throughput metrology. The outlook for APP in 2D materials is promising, with ongoing developments poised to impact manufacturing and fundamental materials science. Integration with advanced metrology and codesign frameworks will accelerate the realization of next-generation microelectronics enabled by 2D materials.
Keywords:
atomic layer deposition
atomic layer etching
atomic precision advanced manufacturing
semiconductors
two-dimensional materials
electronic devices
Journal
IF:
16
Papers:
2.6W
Citations:
25.6W