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E

Ezra Bussmann

sandia national laboratory

17H-index
138Paper Count
762Citation Count
Published Papers 22
Publication Date
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Deep generative learning of magnetic frustration in artificial spin ice from magnetic force microscopy images
errnpj Computational Materials
IF11.9
err2026-05-20
err0
errOAAI
errArnab Neogi; Suryakant Mishra; Prasad P. Iyer; Tzu-Ming Lu; Ezra Bussmann; Sergei Tretiak; Andrew C. Jones; Jian-Xin Zhu
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A Reduced-Temperature Process for Preparing Atomically Clean Si(100) and SiGe(100) Surfaces with Vapor HF
errJOURNAL OF PHYSICAL CHEMISTRY C
IF3.2
err2025-05-06
err0
PREAI
errPena, Luis Fabian; Anderson, Evan M.; Mudrick, John P.; Rosenberg, Samantha G.; Scrymgeour, David A.; Bussmann, Ezra; Misra, Shashank
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Atomic Precision Processing of Two-Dimensional Materials for Next-Generation Microelectronics
errACS NANO
IF16
err2024-08-06
err0
PREAI
errYoo, Jinkyoung; Nam, Chang-Yong; Bussmann, Ezra
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Modeling Si/SiGe quantum dot variability induced by interface disorder reconstructed from multiperspective microscopy
errNPJ QUANTUM INFORMATION
IF8.3
err2024-03-27
err7
errOAAI
errPena, Luis Fabian; Koepke, Justine C.; Dycus, Joseph Houston; Mounce, Andrew; Baczewski, Andrew D.; Jacobson, N. Tobias; Bussmann, Ezra
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Quantifying the Variation in the Number of Donors in Quantum Dots Created Using Atomic Precision Advanced Manufacturing
errJOURNAL OF PHYSICAL CHEMISTRY C
IF3.2
err2023-03-15
err3
PREAI
errCampbell, Quinn T.; Koepke, Justine C.; Ivie, Jeffrey A.; Mounce, Andrew M.; Ward, Daniel R.; Carroll, Malcolm S.; Misra, Shashank; Baczewski, Andrew D.; Bussmann, Ezra
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errSave
Impact of Incorporation Kinetics on Device Fabrication with Atomic Precision
errPHYSICAL REVIEW APPLIED
IF4.4
err2021-11-18
err17
errOAAI
errIvie, Jeffrey A.; Campbell, Quinn; Koepke, Justin C.; Brickson, Mitchell, I; Schultz, Peter A.; Muller, Richard P.; Mounce, Andrew M.; Ward, Daniel R.; Carroll, Malcolm S.; Bussmann, Ezra; Baczewski, Andrew D.; Misra, Shashank
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Atomic-precision advanced manufacturing for Si quantum computing
errMRS BULLETIN
IF4.9
err2021-08-03
err18
errOAAI
errBussmann, Ezra; Butera, Robert E.; Owen, James H. G.; Randall, John N.; Rinaldi, Steven M.; Baczewski, Andrew D.; Misra, Shashank
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errSave
First-principles calculations of metal surfaces. II. Properties of low-index platinum surfaces toward understanding electron emission
errPHYSICAL REVIEW B
IF3.7
err2021-05-20
err5
errOAAI
errSchultz, Peter A.; Hjalmarson, Harold P.; Berg, Morgann; Bussmann, Ezra; Scrymgeour, David A.; Ohta, Taisuke; Moore, Chris H.
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AlCl3-Dosed Si(100)-2 x 1: Adsorbates, Chlorinated Al Chains, and Incorporated Al
errJOURNAL OF PHYSICAL CHEMISTRY C
IF3.2
err2021-05-19
err14
errOAAI
errRadue, Matthew S.; Baek, Sungha; Farzaneh, Azadeh; Dwyer, K. J.; Campbell, Quinn; Baczewski, Andrew D.; Bussmann, Ezra; Wang, George T.; Mo, Yifei; Misra, Shashank; Butera, R. E.
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A Model for Atomic Precision p-Type Doping with Diborane on Si(100)-2x1
errJOURNAL OF PHYSICAL CHEMISTRY C
IF3.2
err2021-01-06
err12
errOAAI
errCampbell, Quinn; Ivie, Jeffrey A.; Bussmann, Ezra; Schmucker, Scott W.; Baczewski, Andrew D.; Misra, Shashank
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errSave
Atomic-layer doping of SiGe heterostructures for atomic-precision donor devices
errPHYSICAL REVIEW MATERIALS
IF3.4
err2018-06-21
err2
errOAAI
errBussmann, E.; Gamble, John King; Koepke, J. C.; Laroche, D.; Huang, S. H.; Chuang, Y.; Li, J. -Y.; Liu, C. W.; Swartzentruber, B. S.; Lilly, M. P.; Carroll, M. S.; Lu, T-M.
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Determining the resolution of scanning microwave impedance microscopy using atomic-precision buried donor structures
errAPPLIED SURFACE SCIENCE
IF6.9
err2017-11-01
err15
errOAAI
errScrymgeour, D. A.; Baca, A.; Fishgrab, K.; Simonson, R. J.; Marshall, M.; Bussmann, E.; Nakakura, C. Y.; Anderson, M.; Misra, S.
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Catalytically enhanced thermal decomposition of chemically grown silicon oxide layers on Si(001)
errAPPLIED PHYSICS LETTERS
IF3.6
err2016-03-15
err13
PREAI
errLeroy, F.; Passanante, T.; Cheynis, F.; Curiotto, S.; Bussmann, E. B.; Mueller, P.
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Probing the limits of Si:P δ-doped devices patterned by a scanning tunneling microscope in a field-emission mode
errAPPLIED PHYSICS LETTERS
IF3.6
err2014-10-24
err6
errOAAI
errRudolph, M.; Carr, S. M.; Subramania, G.; Ten Eyck, G.; Dominguez, J.; Pluym, T.; Lilly, M. P.; Carroll, M. S.; Bussmann, E.
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errSave
Nonequilibrium diffusion of reactive solid islands
errPHYSICAL REVIEW B
IF3.7
err2014-06-09
err11
errOAAI
errLeroy, F.; Saito, Y.; Cheynis, F.; Bussmann, E.; Pierre-Louis, O.; Mueller, P.
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errSave
Buried Pd slows self-diffusion on Cu(001)
errPHYSICAL REVIEW B
IF3.7
err2011-12-21
err6
errOAAI
errBussmann, E.; Ermanoski, I.; Feibelman, P. J.; Bartelt, N. C.; Kellogg, G. L.
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Dewetting dynamics of silicon-on-insulator thin films
errPHYSICAL REVIEW B
IF3.7
err2011-12-20
err59
PREAI
errCheynis, F.; Bussmann, E.; Leroy, F.; Passanante, T.; Mueller, P.
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Imaging of localized electronic states at a nonconducting surface by single-electron tunneling force microscopy
errNANO LETTERS
IF9.1
err2006-10-19
err19
PREAI
errBussmann, Ezra B.; Zheng, Ning; Williams, Clayton C.
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Single-electron tunneling force spectroscopy of an individual electronic state in a nonconducting surface
errAPPLIED PHYSICS LETTERS
IF3.6
err2006-06-28
err33
PREAI
errBussmann, E.; Williams, C. C.
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errSave
Single-electron manpulation to and from SiO2 surface by electrostatic force microscopy -: art. no. 163109
errAPPLIED PHYSICS LETTERS
IF3.6
err2005-04-13
err19
PREAI
errBussmann, E; Zheng, N; Williams, CC
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errSave

Research Directions

No research directions
Co-authors
Cooperation Journals
M
M. S. Rudolph
H-index: 137 · Papers: 1.8K
S
Sergei Tretiak
H-index: 88 · Papers: 737
N
Ning Zheng
H-index: 73 · Papers: 254
P
Peter J. Feibelman
H-index: 61 · Papers: 294
Y
Yifei Mo
H-index: 59 · Papers: 168
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