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Boosted IGZO optoelectronic synaptic performance by mitigating photolithography-induced surface effects
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DOI：10.1088/1674-4926/25080023.png)
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Abstract
En 中文
Oxide semiconductor-based neuromorphic devices hold great potential for visual information processing, yet their performance is critically limited by photolithography-induced organic residues. This work systematically investigates the effects of photoresist contaminants on In−Ga−Zn−O thin-film transistors (IGZO TFTs), revealing that these residues introduce deep-level trap states that degrade both photo-responsivity and carrier transport dynamics. Through optimized plasma-assisted surface treatments, these adverse effects would be effectively eliminated. Additionally, we show that gate−voltage modulation can precisely control the relaxation kinetics of photocarriers in these devices. By applying these strategies to IGZO-based synaptic arrays, we achieve enhanced image contrast through controlled optoelectronic response modulation. Overall, our findings highlight the critical impact of photolithography-induced organic residues in IGZO optoelectronic synaptic devices and demonstrate an effective approach for performance enhancement through surface plasma treatment and gate−voltage modulation.
Keywords:
IGZO thin-film transistors
photolithography-induced residues
neuromorphic devices
synaptic arrays
gate-voltage modulation
Journal
IF:
5.3
Papers:
277
Citations:
4.0K
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