.png){kind=icon}
.png){kind=icon}
Return
Compact Model Parameter Extraction via Derivative-Free Optimization
.png){kind=icon}
OA
AI
DOI：10.1109/ACCESS.2024.3453198.png)
.png){kind=icon}
Original request for help.png){kind=icon}
Share.png){kind=icon}
Save
Abstract
En 中文
In this paper, we address the problem of compact model parameter extraction to simultaneously extract tens of parameters via derivative-free optimization. Traditionally, parameter extraction is performed manually by dividing the complete set of parameters into smaller subsets, each targeting different operational regions of the device, a process that can take several days or weeks. Our approach streamlines this process by employing derivative-free optimization to identify a good parameter set that best fits the compact model without performing an exhaustive number of simulations. We further enhance the optimization process to address three critical issues in device modeling by carefully choosing a loss function that focuses on relative errors rather than absolute errors to ensure consistent performance across different orders of magnitude, prioritizes accuracy in key operational regions above a specific threshold, and reduces sensitivity to outliers. Furthermore, we utilize the concept of train-test split to assess the model fit and avoid overfitting. We demonstrate the effectiveness of our approach by successfully modeling a diamond Schottky diode with the SPICE diode model and a GaN-on-SiC HEMT with the ASM-HEMT model. For the latter, which involves extracting 35 parameters for the ASM-HEMT DC model, we identified the best set of parameters in under 6,000 trials. Additional examples using both devices are provided to demonstrate robustness to outliers, showing that an excellent fit is achieved even with over 25% of the data purposely corrupted. These examples demonstrate the practicality of our approach, highlighting the benefits of derivative-free optimization in device modeling.
Keywords:
Semiconductor process modeling
Optimization
Semiconductor device modeling
Data models
Data mining
Computational modeling
Numerical models
Schottky diodes
Parameter extraction
SPICE
HEMTs
ASM-HEMT
compact model
derivative-free optimization
device modeling
diamond Schottky diode
GaN HEMTs
parameter extraction
SPICE diode model
Journal
IF:
3.6
Papers:
9.7W
Citations:
29.4W