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SaveShare Save 984 V/3.0 mcm2 Normally-Off and 817 V/ 2.7 mcm2 Normally-On GaN Trench CAVETs With Wrap-Around Gate
Wen, Xinyi; Kasai, Hayao; Sinha, Nishita; Lyu, Junrui; Meng, Chuanzhe; Fujita, Koukichi; Yamasaki, Tsuyoshi; Sawada, Tatsuro; Hirayama, Tomohisa; Chowdhury, Srabanti Share Save 720 V quasi-vertical GaN-on-silicon p-n diodes with surge capability fabricated using selective area growthEl Amrani, Mohammed; Lyu, Junrui; Wen, Xinyi; Marcuzzi, Alberto; Plaza Arguello, David; M'qaddem, Zakariae; Kaltsounis, Thomas; El Rammouz, Hala; Meneghesso, Gaudenzio; Meneghini, Matteo; Charles, Matthew; Buckley, Julien; Chowdhury, Srabanti Share Save Share Save Share Save Share Save Share Save Share Save Share Save A review of GaN RF devices and power amplifiers for 5G communication applicationsLu, Hao; Zhang, Meng; Yang, Ling; Hou, Bin; Martinez, Rafael Perez; Mi, Minhan; Du, Jiale; Deng, Longge; Wu, Mei; Chowdhury, Srabanti; Ma, Xiaohua; Hao, Yue Share Save Share Save Probing the Thermal and Electrical Properties of Ultrawide Bandgap Nitrogen-Polar AlGaN HeterostructuresNoshin, Maliha; Kwon, Heungdong; Khan, Asir Intisar; Alaei, Sauviz P.; Meng, Chuanzhe; Asheghi, Mehdi; Suzuki, Yuri; Salahuddin, Sayeef; Goodson, Kenneth; Chowdhury, Srabanti Share Save Share Save Share Save Cooling future system-on-chips with diamond inter-tiersMalakoutian, Mohamadali; Kasperovich, Anna; Rich, Dennis; Woo, Kelly; Perez, Christopher; Soman, Rohith; Saraswat, Devansh; Kim, Jeong-kyu; Noshin, Maliha; Chen, Michelle; Vaziri, Sam; Bao, Xinyu; Shih, Che Chi; Woon, Wei-Yen; Asheghi, Mehdi; Goodson, Kenneth E.; Liao, Szuya Sandy; Mitra, Subhasish; Chowdhury, Srabanti Share Save Share Save Share Save Share Save Share Save 
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