.png){kind=icon}
.png){kind=icon}
Return
Corrections to “Suppressing Interface Traps Density of Top-Gate MoS<sub>2</sub> Transistor via H<sub>2</sub>O Presoak for HfO<sub>2</sub>”
.png){kind=icon}
PRE
AI
K
Z
Y
Y
L
R
M
DOI：10.1109/led.2026.3706248.png)
.png){kind=icon}
Original request for help.png){kind=icon}
Share.png){kind=icon}
Save
Abstract
En 中文
Presents corrections to the paper, (“Suppressing Interface Traps Density of Top-Gate MoS<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> Transistor via H<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>O Presoak for HfO<sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub>”).
Journal
IF:
4.5
Papers:
614
Citations:
2.3W
Organization
Cited Papers