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Device simulation for decananometer MOSFETs
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DOI：10.1016/S1369-8001(03)00076-3.png)
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Abstract
En 中文
This paper discusses the main issues related to the application of numerical device simulation to advanced decananometer-size MOSFETs. The main trends of CMOS technology evolution are analyzed and discussed with emphasis on the requirements imposed to device simulation programs suitable for application to the development of new, advanced technology generations. The main approaches for the simulation of carrier transport in silicon devices are briefly reviewed and their advantages and limitations are discussed. Finally, two examples of application of advanced physics-based device simulation to the analysis of the operation of state-of-the-art technologies are reported. (C) 2003 Elsevier Ltd. All rights reserved.
Keywords:
MOSFET
device simulation
TCAD
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