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Diamond-based non-volatile memory
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DOI：10.1016/j.carbon.2025.121089.png)
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Abstract
En 中文
The digital age has brought unprecedented challenges in data storage, with exponential growth in data generation outpacing traditional storage solutions in capacity, speed, and reliability. Long-term data preservation is particularly concerning, as current technologies like semiconductor drives and hard disk drives struggle with data longevity beyond a few decades. Optoelectronic memories show promise among emerging storage-class memory technologies, but they face trade-offs between information retention time and fatigue cycles due to material limitations. Diamond, with its exceptional physical properties, especially its ultra-wide bandgap, emerges as a strong candidate for developing non-volatile memories capable of retaining information over extremely long periods. This paper explores the fundamental aspects and fabrication methods of diamond non-volatile memories, focusing on the information storage mechanisms and unique properties of the ultra-deep nitrogen donor in diamond, as well as the associated junction field effect transistor. The study describes the physical concept of the memory effect and the transistor structure, details the fabrication and properties of the samples, and addresses key challenges in creating efficient devices. These findings establish diamond as a viable material for ultra-stable memory applications and provide key insights into its long-term performance.
Keywords:
Diamond
Junction field effect transistor
Non-volatile memory
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