Not logged in Material and electrical characterization of ultrawide bandgap BN/AlN metal-insulator-semiconductor (MIS) Schottky diodes Mudiyanselage, Dinusha Herath; Yekta, Ali Ebadi; Mandia, Ramandeep; Da, Bingcheng; Wang, Dawei; He, Ziyi; Xie, Junzhe; Smith, David J.; Nemanich, Robert J.; Fu, Houqiang Share Save
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Reduced trap state density in AlGaN/GaN HEMTs with low-temperature CVD-grown BN gate dielectric He, Ziyi; Zhang, Xiang; Pieshkov, Tymofii S.; Yekta, Ali Ebadi; Terlier, Tanguy; Mudiyanselage, Dinusha Herath; Wang, Dawei; Da, Bingcheng; Xu, Mingfei; Luo, Shisong; Chang, Cheng; Li, Tao; Nemanich, Robert J.; Zhao, Yuji; Ajayan, Pulickel M.; Fu, Houqiang Share Save
Device and material investigations of GaN enhancement-mode transistors for Venus and harsh environments Xie, Qingyun; Niroula, John; Rajput, Nitul S.; Yuan, Mengyang; Luo, Shisong; Fu, Kai; Isamotu, Mohamed Fadil; Palash, Rafid Hassan; Sikder, Bejoy; Eisner, Savannah R.; Surdi, Harshad; Belanger, Aidan J.; Darmawi-Iskandar, Patrick K.; Aksamija, Zlatan; Nemanich, Robert J.; Goodnick, Stephen M.; Senesky, Debbie G.; Hunter, Gary W.; Chowdhury, Nadim; Zhao, Yuji; Palacios, Tomas Share Save
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The impact of interfacial Si contamination on GaN-on-GaN regrowth for high power vertical devices Fu, Kai; Fu, Houqiang; Deng, Xuguang; Su, Po-Yi; Liu, Hanxiao; Hatch, Kevin; Cheng, Chi-Yin; Messina, Daniel; Meidanshahi, Reza Vatan; Peri, Prudhvi; Yang, Chen; Yang, Tsung-Han; Montes, Jossue; Zhou, Jingan; Qi, Xin; Goodnick, Stephen M.; Ponce, Fernando A.; Smith, David J.; Nemanich, Robert; Zhao, Yuji Share Save
AlGaN/GaN metal-insulator-semiconductor high electron mobility transistors (MISHEMTs) using plasma deposited BN as gate dielectric Yang, Tsung-Han; Brown, Jesse; Fu, Kai; Zhou, Jingan; Hatch, Kevin; Yang, Chen; Montes, Jossue; Qi, Xin; Fu, Houqiang; Nemanich, Robert J.; Zhao, Yuji Share Save
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